SCOPUS 정보 검색 플랫폼

Volumn 21, Issue 20, 2011, Pages 3828-3835

Two distinct origins of highly localized luminescent centers within InGaN/GaN quantum-well light-emitting diodes

(8) De, Suman a Layek, Arunasish a Raja, Archana a Kadir, Abdul b Gokhale, Mahesh R b Bhattacharya, Arnab b Dhar, Subhabrata a Chowdhury, Arindam a

a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY (India)

b TATA INSTITUTE OF FUNDAMENTAL RESEARCH (India)

Author keywords

light emitting diodes; microstructure; photoluminescence; quantum wells

Indexed keywords

ACTIVE LAYER; ALLOY LAYERS; BAND GAP ENERGY; BIMODAL DISTRIBUTION; CARRIER LOCALIZATION; COMPOSITIONAL FLUCTUATIONS; DEEP TRAPS; INDIUM CONTENT; INGAN/GAN; LIGHT-OUTPUT EFFICIENCY; LUMINESCENT CENTERS; NANO-METER-SCALE; NONRADIATIVE RECOMBINATION CENTERS; OPTOELECTRONIC PROPERTIES; PHOTOLUMINESCENCE IMAGING; PL SPECTROSCOPY; POTENTIAL TRAP; QUANTUM WELL; RADIATIVE CENTER; RADIATIVE INTENSITY; RADIATIVE RECOMBINATION; SELF-CONSISTENT CALCULATION; SHALLOW TRAPS; SURFACE COVERAGES; THICKNESS FLUCTUATIONS; THICKNESS VARIATION;

DIODES; EMISSION SPECTROSCOPY; GALLIUM; GALLIUM ALLOYS; INDIUM; INDIUM ALLOYS; LIGHT EMISSION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 80054814772 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201100894 Document Type: Article

Times cited : (50)

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