Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars

Applied Physics Letters

Volumn 100, Issue 26, 2012, Pages

  Chang, J R ^a   Chang, S P ^a   Li, Y J ^a   Cheng, Y J ^a,b   Sou, K P ^a   Huang, J K ^a   Kuo, H C ^a   Chang, C Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; CORE-SHELL; EPITAXIAL REGROWTH; INGAN/GAN; LUMINESCENT PROPERTY; NANOPILLAR; NANOPILLARS; QUANTUM CONFINED STARK EFFECT; SPECTRAL LINE WIDTH; TOPDOWN;

GALLIUM NITRIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84863320359     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4731629     Document Type: Article

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