Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS

Journal of Physics: Conference Series

Volumn 209, Issue , 2010, Pages

  Bennett, S E ^a   Clifton, P H ^b   Ulfig, R M ^b   Kappers, M J ^a   Barnard, J S ^a   Humphreys, C J ^a   Oliver, R A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Imago Scientific Instruments   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DOPING (ADDITIVES); HOLE CONCENTRATION; LIGHT EMITTING DIODES; PROBES;

ALGAN LAYERS; ATOM PROBE TOMOGRAPHY; CONDUCTING LAYERS; DOPING DENSITIES; GAN-BASED DEVICES; MG DOPED ALGAN; STEM IMAGES; TWO-MATERIALS;

GALLIUM NITRIDE;

EID: 77950470393     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/209/1/012014     Document Type: Conference Paper

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