Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes

Applied Physics Letters

Volumn 101, Issue 12, 2012, Pages

  De, Suman ^a   Layek, Arunasish ^a   Bhattacharya, Sukanya ^a   Kumar Das, Dibyendu ^b   Kadir, Abdul ^c   Bhattacharya, Arnab ^c   Dhar, Subhabrata ^a   Chowdhury, Arindam ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b DEPARTMENT OF MATERIALS SCIENCE   (India)

^c TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BLUE SHIFT; EMISSION CENTERS; III-NITRIDE; INGAN/GAN; LOCAL POLARIZATION FIELDS; LOCALIZATION CENTERS; LUMINESCENT CENTERS; NANO SCALE; PHOTOLUMINESCENCE MICROSCOPY; POLARIZATION FIELD; POTENTIAL FLUCTUATIONS; QUANTUM-CONFINED STARK EFFECT; SEMICONDUCTOR HETEROSTRUCTURES; TRANSITION ENERGY; TRAP CENTER;

HETEROJUNCTIONS; INDIUM; LIGHT EMITTING DIODES; NANOTECHNOLOGY; NITRIDES; POLARIZATION; SEMICONDUCTING INDIUM;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84866850981     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4754079     Document Type: Article

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