Revisiting the "in-clustering" question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold

Applied Physics Letters

Volumn 102, Issue 19, 2013, Pages

  Baloch, Kamal H ^a   Johnston Peck, Aaron C ^b   Kisslinger, Kim ^b   Stach, Eric A ^b   Gradečak, Silvija ^c  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATION-CORRECTED ELECTRON MICROSCOPY; AS-GROWN; COMPOSITIONAL VARIATION; HIGH INTENSITY; SCANNING TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON ENERGY LOSS SPECTROSCOPY; INDIUM; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 84877971689     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4807122     Document Type: Article

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