Characterizing atomic composition and dopant distribution in wide band gap semiconductor nanowires using laser-assisted atom probe tomography

Journal of Physical Chemistry C

Volumn 115, Issue 36, 2011, Pages 17688-17694

  Agrawal, Ravi ^a   Bernal, Rodrigo A ^a   Isheim, Dieter ^a   Espinosa, Horacio D ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM PROBE TOMOGRAPHY; ATOMIC COMPOSITIONS; DOPANT DISTRIBUTION; GAN NANOWIRES; II-IV SEMICONDUCTORS; LASER-ASSISTED; LASER-PULSE ENERGY; MATERIAL RESPONSE; MG-DOPED; MILD OPERATING CONDITIONS; OPTIMAL EXPERIMENTAL CONDITIONS; SEMICONDUCTING NANOWIRES; SPATIALLY RESOLVED; STRUCTURE PROPERTY RELATIONSHIPS; THERMAL TRANSPORT; WIDE BAND GAP; WIDE-BAND-GAP SEMICONDUCTOR;

ATOMS; DOPING (ADDITIVES); ENERGY GAP; EVAPORATION; GALLIUM NITRIDE; ISOMERS; OPTIMIZATION; OPTOELECTRONIC DEVICES; PHASE TRANSITIONS; PROBES; SEMICONDUCTOR LASERS;

NANOWIRES;

EID: 80052601238     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp2047823     Document Type: Article

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