The nanorod approach: GaN NanoLEDs for solid state lighting

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2296-2301

  Waag, Andreas ^a   Wang, Xue ^a   Fündling, Sönke ^a   Ledig, Johannes ^a   Erenburg, Milena ^a   Neumann, Richard ^a   Al Suleiman, Mohamed ^a   Merzsch, Stephan ^a   Wei, Jiandong ^a   Li, Shunfeng ^a   Wehmann, Hergo H ^a   Bergbauer, Werner ^b   Straßburg, Martin ^b   Trampert, Achim ^c   Jahn, Uwe ^c   Riechert, Henning ^c  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

3D processing; GaN; NanoLEDs; Solid state lighting

Indexed keywords

3-D PROCESSING; CORE-SHELL; GAN; GAN NANORODS; LOW DEFECT DENSITIES; NANOLED; NANOLEDS; QUANTITATIVE COMPARISON; SOLID STATE LIGHTING; SUBSTRATE BENDING; TECHNOLOGICAL RISK; THERMAL EXPANSION COEFFICIENTS; VERTICALLY ALIGNED;

DEFECT DENSITY; LIGHTING; NANORODS; SILICON WAFERS; THERMAL EXPANSION; THREE DIMENSIONAL;

GALLIUM NITRIDE;

EID: 79960716315     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000989     Document Type: Article

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