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Volumn 98, Issue 7, 2011, Pages

Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency

(9) Polyakov, A Y a Smirnov, N B a Govorkov, A V a Amano, H b Pearton, S J c Lee, I H d Sun, Q e Han, J e Karpov, S Yu f

a INSTITUTE OF RARE METALS (Russian Federation)

b NAGOYA UNIVERSITY (Japan)

c UNIVERSITY OF FLORIDA (United States)

d Chonbuk National University (South Korea)

e Yale University (United States)

f SOFT IMPACT LTD (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; DEEP TRAPS; ENERGY LEVEL; EXTENDED DEFECT; HIGH DEFECT DENSITIES; LIGHT EMISSION EFFICIENCY; METALORGANIC CHEMICAL VAPOR DEPOSITION; MICRO-CATHODOLUMINESCENCE; NON-POLAR GAN; NONRADIATIVE RECOMBINATION CENTERS; R-SAPPHIRE; SEMI-INSULATING;

CHEMICAL ANALYSIS; DEFECTS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SILICON CARBIDE;

DEFECT DENSITY;

EID: 79951863252 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3555470 Document Type: Article

Times cited : (34)

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