메뉴 건너뛰기




Volumn , Issue , 2012, Pages 131-157

Plasma Atomic Layer Deposition

Author keywords

Atomic layer deposition; Plasma atomic layer deposition; Plasma processing; Plasma assisted atomic layer deposition; Plasma enhanced atomic layer deposition

Indexed keywords


EID: 84884059098     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9783527639915.ch7     Document Type: Chapter
Times cited : (7)

References (70)
  • 1
    • 84883963560 scopus 로고    scopus 로고
    • Website ASM international August 1
    • Website ASM international http://www.asm.com August 1 2010.
    • (2010)
  • 2
    • 84883950125 scopus 로고    scopus 로고
    • Website Oxford Instruments August 1
    • Website Oxford Instruments http://www.oxford-instruments.com August 1 2010.
    • (2010)
  • 3
    • 84884122579 scopus 로고    scopus 로고
    • Website Beneq August 1
    • Website Beneq http://www.beneq.com August 1 2010.
    • (2010)
  • 4
    • 84883976969 scopus 로고    scopus 로고
    • Website Cambridge Nanotech August 1
    • Website Cambridge Nanotech http://www.cambridgenanotech.com August 1 2010.
    • (2010)
  • 5
    • 21744433722 scopus 로고
    • Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
    • De Keijser M. and Van Opdorp C. (1991) Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen. Appl. Phys. Lett. 58(11) 1187-1189.
    • (1991) Appl. Phys. Lett , vol.58 , Issue.11 , pp. 1187-1189
    • De Keijser, M.1    Van Opdorp, C.2
  • 7
    • 23044522146 scopus 로고    scopus 로고
    • Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
    • Rossnagel S.M. Sherman A. and Turner F. (2000) Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers. J. Vac. Sci. Technol. B 18(4) 2016-2020.
    • (2000) J. Vac. Sci. Technol. B , vol.18 , Issue.4 , pp. 2016-2020
    • Rossnagel, S.M.1    Sherman, A.2    Turner, F.3
  • 11
    • 20544457612 scopus 로고
    • Ion-surface interactions during thin-film deposition
    • Takagi T. (1984) Ion-surface interactions during thin-film deposition. J. Vac. Sci. Technol. A 2(2) 382-388.
    • (1984) J. Vac. Sci. Technol. A , vol.2 , Issue.2 , pp. 382-388
    • Takagi, T.1
  • 12
    • 73849140446 scopus 로고    scopus 로고
    • Optical emission spectroscopy as a tool for studying optimizing and monitoring plasma-assisted atomic layer deposition processes
    • Mackus A.J.M. Heil S.B.S. Langereis E. Knoops H.C.M. van de Sanden M.C.M. and Kessels W.M.M. (2010) Optical emission spectroscopy as a tool for studying optimizing and monitoring plasma-assisted atomic layer deposition processes. J. Vac. Sci. Technol. A 28 (1) 77-87.
    • (2010) J. Vac. Sci. Technol. A , vol.28 , Issue.1 , pp. 77-87
    • Mackus, A.J.M.1    Heil, S.B.S.2    Langereis, E.3    Knoops, H.C.M.4    van de Sanden, M.C.M.5    Kessels, W.M.M.6
  • 13
    • 0004541138 scopus 로고
    • Kinetics of hydrogen atom recombination on surfaces
    • Wood B.J. and Wise H. (1961) Kinetics of hydrogen atom recombination on surfaces. J. Appl. Chem. 65(11) 1976.
    • (1961) J. Appl. Chem. , vol.65 , Issue.11 , pp. 1976
    • Wood, B.J.1    Wise, H.2
  • 14
    • 37049041805 scopus 로고
    • Recombination of atoms at surfaces. 5. Oxygen atoms at oxide surfaces
    • Greaves J.C. and Linnett J.W. (1959) Recombination of atoms at surfaces. 5. Oxygen atoms at oxide surfaces. Trans. Faraday Soc. 55(8) 1346-1354.
    • (1959) Trans. Faraday Soc , vol.55 , Issue.8 , pp. 1346-1354
    • Greaves, J.C.1    Linnett, J.W.2
  • 15
    • 0026373165 scopus 로고
    • Recombination of O N and H-atoms on silica: kinetics and mechanism
    • Kim Y.C. and Boudart M. (1991) Recombination of O N and H-atoms on silica: kinetics and mechanism. Langmuir 7(12) 2999-3005.
    • (1991) Langmuir , vol.7 , Issue.12 , pp. 2999-3005
    • Kim, Y.C.1    Boudart, M.2
  • 16
    • 0035820247 scopus 로고    scopus 로고
    • Electronegativity of low-pressure highdensity oxygen discharges
    • Gudmundsson J.T. Kouznetsov I.G. Patel K.K. and Lieberman M.A. (2001) Electronegativity of low-pressure highdensity oxygen discharges. J. Phys. D 34 (7) 1100-1109.
    • (2001) J. Phys. D , vol.34 , Issue.7 , pp. 1100-1109
    • Gudmundsson, J.T.1    Kouznetsov, I.G.2    Patel, K.K.3    Lieberman, M.A.4
  • 19
    • 84884068464 scopus 로고    scopus 로고
    • Website MKS Instruments August 1
    • Website MKS Instruments http://www.mksinst.com August 1 2010).
    • (2010)
  • 20
    • 33749844032 scopus 로고    scopus 로고
    • Lanthanum-oxide thin films deposited by plasma-enhanced atomic layer deposition
    • Lee E.J. Ko M.G. Kim B.Y. Park S.K. Kim H.D. and Park J.W. (2006) Lanthanum-oxide thin films deposited by plasma-enhanced atomic layer deposition. J. Korean Phys. Soc. 49(3) 1243-1246.
    • (2006) J. Korean Phys. Soc , vol.49 , Issue.3 , pp. 1243-1246
    • Lee, E.J.1    Ko, M.G.2    Kim, B.Y.3    Park, S.K.4    Kim, H.D.5    Park, J.W.6
  • 21
    • 0036565106 scopus 로고    scopus 로고
    • Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
    • Kim H. and Rossnagel S.M. (2002) Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition. J. Vac. Sci. Technol. A 20 (3) 802-808.
    • (2002) J. Vac. Sci. Technol. A , vol.20 , Issue.3 , pp. 802-808
    • Kim, H.1    Rossnagel, S.M.2
  • 27
    • 0029657431 scopus 로고    scopus 로고
    • Oxygen diffusion barrier properties of transparent oxide coatings on polymeric substrates
    • Chatham H. (1996) Oxygen diffusion barrier properties of transparent oxide coatings on polymeric substrates. Surf. Coat. Technol. 78(1-3) 1-9.
    • (1996) Surf. Coat. Technol , vol.78 , Issue.1-3 , pp. 1-9
    • Chatham, H.1
  • 29
  • 32
    • 19144373173 scopus 로고    scopus 로고
    • Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
    • Yun S.J. Ko Y.W. and Lim J.W. (2004) Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition. Appl. Phys. Lett. 85 (21) 4896-4898.
    • (2004) Appl. Phys. Lett , vol.85 , Issue.21 , pp. 4896-4898
    • Yun, S.J.1    Ko, Y.W.2    Lim, J.W.3
  • 35
    • 84883962900 scopus 로고    scopus 로고
    • 8th International Conference on Atomic Layer Deposition Bruges Belgium February 7 2008 Book of Abstracts
    • Williams P. Kingsley A. Leese T. Otsuka Y. and Uotani K. (2008) 8th International Conference on Atomic Layer Deposition Bruges Belgium February 7 2008 Book of Abstracts.
    • (2008)
    • Williams, P.1    Kingsley, A.2    Leese, T.3    Otsuka, Y.4    Uotani, K.5
  • 44
    • 34547408512 scopus 로고    scopus 로고
    • Atomic layer deposition of noble metal thin films
    • PhD thesis University of Helsinki Finland
    • Aaltonen T. (2005) Atomic layer deposition of noble metal thin films. PhD thesis University of Helsinki Finland.
    • (2005)
    • Aaltonen, T.1
  • 49
    • 84883928052 scopus 로고    scopus 로고
    • Baltic Conference on Atomic Layer Deposition Oslo Norway June 19 2006 Book of Abstracts
    • Kessels W.M.M. (2006) Opportunities and challenges of plasma-enhanced ALD. Baltic Conference on Atomic Layer Deposition Oslo Norway June 19 2006 Book of Abstracts.
    • (2006) Opportunities and challenges of plasma-enhanced ALD
    • Kessels, W.M.M.1
  • 52
    • 0141567439 scopus 로고    scopus 로고
    • Conformal coating on ultrahigh-aspect-ratio nanopores of anodic alumina by atomic layer deposition
    • Elam J.W. Routkevitch D. Mardilovich P.P. and George S.M. (2003) Conformal coating on ultrahigh-aspect-ratio nanopores of anodic alumina by atomic layer deposition. Chem. Mater. 15 (18) 3507-3517.
    • (2003) Chem. Mater , vol.15 , Issue.18 , pp. 3507-3517
    • Elam, J.W.1    Routkevitch, D.2    Mardilovich, P.P.3    George, S.M.4
  • 58
    • 34248356419 scopus 로고    scopus 로고
    • Radical enhanced atomic layer deposition of tantalum oxide
    • Niskanen A. Kreissig U. Leskelä M. and Ritala M. (2007) Radical enhanced atomic layer deposition of tantalum oxide. Chem. Mater. 19(9) 2316-2320.
    • (2007) Chem. Mater , vol.19 , Issue.9 , pp. 2316-2320
    • Niskanen, A.1    Kreissig, U.2    Leskelä, M.3    Ritala, M.4
  • 59
    • 0034253217 scopus 로고    scopus 로고
    • Chemical and catalytic properties of ozone
    • Oyama S.T. (2000) Chemical and catalytic properties of ozone. Catal. Rev. Sci. Eng. 42(3) 279-322.
    • (2000) Catal. Rev. Sci. Eng , vol.42 , Issue.3 , pp. 279-322
    • Oyama, S.T.1
  • 61
    • 33746794963 scopus 로고    scopus 로고
    • In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
    • Langereis E. Heil S.B.S. van de Sanden M.C.M. and Kessels W.M.M. (2006) In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition. J. Appl. Phys. 100(2) 023534.
    • (2006) J. Appl. Phys. , vol.100 , Issue.2 , pp. 023534
    • Langereis, E.1    Heil, S.B.S.2    van de Sanden, M.C.M.3    Kessels, W.M.M.4
  • 62
    • 0000288368 scopus 로고    scopus 로고
    • Plasma vacuum ultraviolet emission in an electron cyclotron resonance etcher
    • Cismaru C. and Shohet J.L. (1999) Plasma vacuum ultraviolet emission in an electron cyclotron resonance etcher. Appl. Phys. Lett. 74(18) 2599-2601.
    • (1999) Appl. Phys. Lett , vol.74 , Issue.18 , pp. 2599-2601
    • Cismaru, C.1    Shohet, J.L.2
  • 64
    • 0038447119 scopus 로고    scopus 로고
    • Radiation effects and hardening of MOS technology: devices and circuits
    • Hughes H.L. and Benedetto J.M. (2003) Radiation effects and hardening of MOS technology: devices and circuits. IEEE Trans. Nucl. Sci. 50(3) 500-521.
    • (2003) IEEE Trans. Nucl. Sci , vol.50 , Issue.3 , pp. 500-521
    • Hughes, H.L.1    Benedetto, J.M.2
  • 65
    • 0035894785 scopus 로고    scopus 로고
    • On-wafer monitoring of vacuum-ultraviolet radiation damage in high-density plasma processes
    • Samukawa S. Ishikawa Y. Kumagai S. and Okigawa N. (2001) On-wafer monitoring of vacuum-ultraviolet radiation damage in high-density plasma processes. Jpn. J. Appl. Phys. Part 2 40 (12B) L1346-L1348.
    • (2001) Jpn. J. Appl. Phys. Part 2 , vol.40 , Issue.12 B
    • Samukawa, S.1    Ishikawa, Y.2    Kumagai, S.3    Okigawa, N.4
  • 67
    • 77952986237 scopus 로고    scopus 로고
    • Effects of vacuum ultraviolet and ultraviolet irradiation on ultrathin hafnium-oxide dielectric layers on (100)Si as measured with electron-spin resonance
    • Ren H. Cheng S.L. Nishi Y. and Shohet J.L. (2010) Effects of vacuum ultraviolet and ultraviolet irradiation on ultrathin hafnium-oxide dielectric layers on (100)Si as measured with electron-spin resonance. Appl. Phys. Lett. 96 (19) 192904.
    • (2010) Appl. Phys. Lett , vol.96 , Issue.19 , pp. 192904
    • Ren, H.1    Cheng, S.L.2    Nishi, Y.3    Shohet, J.L.4
  • 69
    • 84883911844 scopus 로고    scopus 로고
    • Website Levitech August 1
    • Website Levitech http://www.levitech.nl August 1 2010.
    • (2010)
  • 70
    • 84884046612 scopus 로고    scopus 로고
    • Website TNO August 1
    • Website TNO http://www.tno.nl August 1 2010.
    • (2010)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.