In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  Langereis, E ^a   Heil, S B S ^a   Van De Sanden, M C M ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELLIPSOMETRY; PHOTONS; SPECTROSCOPIC ANALYSIS; TITANIUM NITRIDE;

DRUDE-LORENTZ OSCILLATOR PARAMETRIZATION; IN SITU SPECTROSCOPIC ELLIPSOMETRY (SE); PLASMA-ASSISTED ATOMIC LAYER DEPOSITION (PA-ALD);

ULTRATHIN FILMS;

EID: 33746794963     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2214438     Document Type: Article

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