Effects of vacuum ultraviolet and ultraviolet irradiation on ultrathin hafnium-oxide dielectric layers on (100)Si as measured with electron-spin resonance

Applied Physics Letters

Volumn 96, Issue 19, 2010, Pages

  Ren, H ^a   Cheng, S L ^b   Nishi, Y ^b   Shohet, J L ^a  

^a University of Wisconsin Madison   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSOLUTE VALUES; DEFECT STATE; ELECTRON-SPIN RESONANCE; G FACTORS; OXIDE DIELECTRIC; POSITIVELY CHARGED; STATE CONCENTRATION; ULTRA-THIN; ULTRAVIOLET IRRADIATIONS; VACUUM ULTRAVIOLETS; VUV IRRADIATION;

DEFECTS; HAFNIUM; IRRADIATION; OXYGEN; OXYGEN VACANCIES; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; RESONANCE; SPIN DYNAMICS; VACUUM;

HAFNIUM OXIDES;

EID: 77952986237     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3430570     Document Type: Article

References (21)

1. J. R. Woodworth, M. G. Blain, R. L. Jarecki, T. W. Hamiliton, and B. P. Aragon, J. Vac. Sci. Technol. A JVTAD6 0734-2101 17, 3209 (1999). 10.1116/1.582044
2. C. Cismaru and J. L. Shohet, Appl. Phys. Lett. APPLAB 0003-6951 74, 2599 (1999). 10.1063/1.123909
3. G. S. Upadhyaya, J. L. Shohet, and J. L. Lauer, Appl. Phys. Lett. APPLAB 0003-6951 86, 102101 (2005). 10.1063/1.1879100 (Pubitemid 40597103)
4. J. L. Lauer, H. Sinha, M. T. Nichols, G. A. Antonelli, Y. Nishi, and J. L. Shohet, " Charge trapping within UV and VUV irradiated low- k porous organosilicate dielectrics.," J. Electrochem. Soc. JESOAN 0013-4651 (to be published).
5. B. B. Triplett, P. T. Chen, Y. Nishi, P. H. Kasai, J. J. Chambers, and L. Colombo, J. Appl. Phys. JAPIAU 0021-8979 101, 013703 (2007). 10.1063/1.2402974 (Pubitemid 46120635)
6. A. Stesmans and V. V. Afanas'ev, Appl. Phys. Lett. APPLAB 0003-6951 85, 3792 (2004). 10.1063/1.1787152
7. G. D. Wilk, R. W. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 89, 5243 (2001). 10.1063/1.1361065
8. Y. Nishi, Jpn. J. Appl. Phys. JJAPA5 0021-4922 10, 52 (1971). 10.1143/JJAP.10.52
9. A. Stesmans and V. V. Afanas'ev, J. Appl. Phys. JAPIAU 0021-8979 97, 033510 (2005). 10.1063/1.1818718 (Pubitemid 40232224)
10. E. H. Poindexter, P. J. Caplan, B. E. Deal, and R. R. Razouk, J. Appl. Phys. JAPIAU 0021-8979 52, 879 (1981). 10.1063/1.328771 (Pubitemid 11502276)
11. E. P. O'Reilly and J. Robertson, Phys. Rev. B PRBMDO 0163-1829 27, 3780 (1983). 10.1103/PhysRevB.27.3780
12. C. P. Poole and H. A. Farach, ASM Handbook, (ASM International, Materials Park, Ohio, 1986), Vol. 10, pp. 253-266.
13. M. Tabib-Azar, D. Akinwande, G. E. Ponchak, and S. R. LeClair, Rev. Sci. Instrum. RSINAK 0034-6748 70, 3083 (1999). 10.1063/1.1149871
14. A. Schweiger and G. Jeschke, Principles of Pulse Electron Paramagnetic Resonance (Oxford University Press, Oxford, 2001).
15. G. W. Ludwig and H. H. Woodbury, Phys. Rev. PRVAAH 0096-8250 113, 1014 (1959). 10.1103/PhysRev.113.1014
16. G. Buscarino and S. Agnello, J. Non-Cryst. Solids JNCSBJ 0022-3093 353, 577 (2007). 10.1016/j.jnoncrysol.2006.12.031 (Pubitemid 46341333)
17. J. L. Lauer, J. L. Shohet, and Y. Nishi, Appl. Phys. Lett. APPLAB 0003-6951 94, 162907 (2009). 10.1063/1.3122925
18. N. V. Nguyen, A. B. Davydov, D. Chandler-Horowitz, and M. M. Frank, Appl. Phys. Lett. APPLAB 0003-6951 87, 192903 (2005). 10.1063/1.2126136 (Pubitemid 41567662)
19. K. Xiong, J. Robertson, M. C. Gibson, and S. J. Clark, Appl. Phys. Lett. APPLAB 0003-6951 87, 183505 (2005). 10.1063/1.2119425 (Pubitemid 41528237)
20. P. Broqvist and A. Pasquarello, Appl. Phys. Lett. APPLAB 0003-6951 90, 082907 (2007). 10.1063/1.2643300
21. M. Houssa, M. Tuominen, M. Naili, V. Afanas'ev, A. Stesmans, S. Haukka, and M. M. Heyns, J. Appl. Phys. JAPIAU 0021-8979 87, 8615 (2000). 10.1063/1.373587