Effect of thermal annealing on charge exchange between oxygen interstitial defects within HfO2 and oxygen-deficient silicon centers within the SiO2 /Si interface

Applied Physics Letters

Volumn 94, Issue 16, 2009, Pages

  Lauer, J L ^a   Shohet, J L ^a   Nishi, Y ^b  

^a University of Wisconsin Madison   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE EXCHANGES; HFO2 DIELECTRICS; INTERFACIAL LAYERS; INTERSTITIAL DEFECTS; SILICON CENTERS; THERMAL-ANNEALING; TRAPPED CHARGES; VACUUM ULTRA VIOLETS; VUV SPECTROSCOPIES;

CHARGE TRANSFER; ELECTRONIC STATES; INTERFACIAL ENERGY; OXYGEN; PLASMAS; SILICON; SILICON OXIDES;

HAFNIUM COMPOUNDS;

EID: 65449182357     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3122925     Document Type: Article

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