Radical enhanced atomic layer deposition of tantalum oxide

Chemistry of Materials

Volumn 19, Issue 9, 2007, Pages 2316-2320

  Niskanen, Antti ^a   Kreissig, Ulrich ^b   Leskelä, Markku ^a   Ritala, Mikko ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; FILM GROWTH; GROWTH RATE; LEAKAGE CURRENTS; PERMITTIVITY; SUBSTRATES; X RAY DIFFRACTION;

TANTALUM ETHOXIDE; TANTALUM OXIDE; X-RAY REFLECTIVITY;

TANTALUM COMPOUNDS;

EID: 34248356419     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm0626482     Document Type: Article

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