Direct ion flux measurements at high-pressure-depletion conditions for microcrystalline silicon deposition

Journal of Applied Physics

Volumn 114, Issue 6, 2013, Pages

  Bronneberg, A C ^a   Kang, X ^a   Palmans, J ^a   Janssen, P H J ^a   Lorne, T ^a   Creatore, M ^a,b   Van De Sanden, M C M ^a,c  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b Solliance Solar Research   (Netherlands)

^c DUTCH INSTITUTE FOR FUNDAMENTAL ENERGY RESEARCH   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITED MATERIALS; DEPOSITION FLUXES; ELECTRON DENSITY PROFILES; LOW-PRESSURE CONDITIONS; MICROCRYSTALLINE SILICON FILMS; MICROCRYSTALLINE SILICON THIN FILMS; THIN FILM ANALYSIS; TRANSITION REGIMES;

AMORPHOUS SILICON; ATOMS; DEPOSITION; EMISSION SPECTROSCOPY; FILM GROWTH; HYDROGEN; LIGHT EMISSION; MICROCRYSTALLINE SILICON; PLASMAS;

IONS;

EID: 84883433923     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4817859     Document Type: Article

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