The role of ion-bulk interactions during high rate deposition of microcrystalline silicon by means of the multi-hole-cathode VHF plasma

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 937-940

  Smets, A H M ^a   Kondo, M ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

FTIR measurements; Microcrystallinity; Plasma deposition; Raman spectroscopy; Silicon

Indexed keywords

AMORPHIZATION; CATHODES; HIGH PRESSURE EFFECTS; PHASE DIAGRAMS; PLASMAS; RAMAN SPECTROSCOPY; SILICON; SUBSTRATES;

FTIR MEASUREMENTS; MICROCRYSTALLINITY; PLASMA DEPOSITION;

CRYSTALLINE MATERIALS;

EID: 33745452867     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.10.073     Document Type: Article

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