High rate deposition of microcrystalline silicon using conventional plasma-enhanced chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 10 PART A, 1998, Pages

  Guo, Lihui ^a   Kondo, Michio ^a   Fukawa, Makoto ^a   Saitoh, Kimihiko ^a   Matsuda, Akihisa ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Crystallinity; Deposition rate; Hydrogen dilution; Microcrystalline silicon; Optical emission spectroscopy (OES); Plasma enhanced chemical vapor deposition (PECVD)

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; CRYSTAL STRUCTURE; EMISSION SPECTROSCOPY; HIGH PRESSURE EFFECTS; HYDROGENATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

MICROCRYSTALLINE SILICON; OPTICAL EMISSION SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0032179064     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1116     Document Type: Article

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