High-rate growth of microcrystalline silicon films using a high-density SiH4/H2 glow-discharge plasma

Thin Solid Films

Volumn 457, Issue 1, 2004, Pages 84-89

  Niikura, Chisato ^a   Itagaki, Naho ^b   Kondo, Michio ^a   Kawai, Yoshinobu ^b   Matsuda, Akihisa ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

Plasma processing and deposition; Silicon

Indexed keywords

CARRIER CONCENTRATION; CATHODES; CHARGE COUPLED DEVICES; CHEMICAL VAPOR DEPOSITION; GLOW DISCHARGES; OPTIMIZATION; PLASMAS; PRESSURE EFFECTS; RAMAN SCATTERING; SILICON; THERMOCOUPLES;

OPTICAL EMISSION SPECTROSCOPY (OES); OPTICAL TRANSITIONS; PLASMA PROCESSING AND DEPOSITION; SPATIAL DISTRIBUTION;

THIN FILMS;

EID: 2342568977     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.041     Document Type: Conference Paper

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