Compact floating ion energy analyzer for measuring energy distributions of ions bombarding radio-frequency biased electrode surfaces

Review of Scientific Instruments

Volumn 70, Issue 6, 1999, Pages 2689-2698

  Edelberg, Erik A ^a   Perry, Andrew ^b   Benjamin, Neil ^b   Aydil, Eray S ^a  

^a University of California   (United States)

^b LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; ELECTROSTATICS; PLASMA DEVICES; PROBES; VACUUM TECHNOLOGY;

COMPACT FLOATING ION ENERGY ANALYZERS; HIGH-DENSITY TRANSFORMER COUPLED PLASMA (TCP) REACTORS;

ION BOMBARDMENT;

EID: 0032620456     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1149829     Document Type: Article

References (28)

1. J. Hopwood, Plasma Sources Sci. Technol. 1, 109 (1992).
2. M. A. Lieberman and R. A. Gottscho, Physics of Thin Films (Academic, Orlando, FL, 1993).
3. J. W. Coburn and E. Kay, J. Appl. Phys. 43, 4965 (1972).
4. K. Kohler, J. W. Coburn, D. E. Home, E. Kay, and J. H. Keller, J. Appl. Phys. 57, 59 (1985).
5. S. G. Ingram and N. S. J. Braithwaite, J. Phys. D 21, 1496 (1988).
6. A. D. Kuypers and H. J. Hopman, J. Appl. Phys. 63, 1894 (1988).
7. J. W. Coburn, Thin Solid Films 171, 65 (1989).
8. A. D. Kuypers and H. J. Hopman, J. Appl. Phys. 67, 1229 (1990).
9. J. Liu, G. L. Huppert, and H. H. Sawin, J. Appl. Phys. 68, 3916 (1990).
10. S. G. Ingram and N. S. J. Braithwaite, J. Appl. Phys. 68, 5519 (1990).
11. W. M. Holber and J. Forster, J. Vac. Sci. Technol. A 8, 3720 (1990).
12. J. Janes and C. Huth, Appl. Phys. Lett. 61, 261 (1992).
13. J. Janes and C. Huth, J. Vac. Sci. Technol. A 10, 3086 (1992).
14. C. Charles, R. W. Boswell, and R. K. Porteous, J. Vac. Sci. Technol. A 10, 398 (1992).
15. C. Charles, J. Vac. Sci. Technol. A 11, 157 (1993).
16. C. Bohm and J. Perrin, Rev. Sci. Instrum. 64, 31 (1993).
17. J. Janes, J. Appl. Phys. 74, 659 (1993).
18. R. J. M. M. Snijkers, M. J. M. V. Sambeek, M. B. Hoppenbrouwers, G. M. W. Kroesen, and F. J. D. Hoog, J. Appl. Phys. 79, 8982 (1996).
19. J. R. Woodworth, M. E. Riley, D. C. Meister, B. P. Aragon, M. S. Le, and H. H. Sawin, J. Appl. Phys. 80, 1304 (1996).
20. J. R. Woodworth, B. P. Aragon, and T. W. Hamilton, Appl. Phys. Lett. 70, 1947 (1997).
21. J. R. Woodworth, M. E. Riley, P. A. Miller, G. A. Hebner, and T. W. Hamilton, J. Appl. Phys. 81, 5950 (1997).
22. J. R. Woodworth, M. E. Riley, P. A. Miller, C. A. Nichols, and T. W. Hamilton, J. Vac. Sci. Technol. A 15, 1 (1997).
23. E. S. Aydil, B. O. M. Quiniou, J. T. C. Lee, J. A. Gregus, and R. A. Gottscho, Mater. Sci. Semicond. Processing 1, 75 (1998).
24. J. Janes, U. Banziger, C. Huth, P. Hoffmann, G. Neumann, H.-C. Scheer, and U. Kohler, Rev. Sci. Instrum. 63, 48 (1992).
25. E. A. Edelberg, A. J. Perry, N. Benjamin, and E. S. Aydil, J. Vac. Sci. Technol. A 17, 506 (1999).
26. J. V. Scanlan and M. B. Hopkins, J. Vac. Sci. Technol. A 10, 1207 (1992).
27. M. B. Hopkins, J. Res. Natl. Inst. Stand. Technol. 100, 415 (1995).
28. R. T. C. Tsui, Phys. Rev. 168, 107 (1967).