In-situ transmission measurements as process control for thin-film silicon solar cells

Solar Energy Materials and Solar Cells

Volumn 95, Issue 12, 2011, Pages 3328-3332

  Meier, M ^a   Muthmann, S ^a   Flikweert, A J ^a   Dingemans, G ^a,b   Van De Sanden, M C M ^b   Gordijn, A ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

In situ; Process control; Thin film silicon

Indexed keywords

CRYSTALLINITIES; CRYSTALLINITY FRACTION; DEPOSITION PROCESS; EX SITU; GOOD CORRELATIONS; GRADUAL CHANGES; IN-SITU; IN-SITU TRANSMISSION; INTENSITY RATIO; LIGHT-TRAPPING; MATERIAL PROPERTY; MONITORING AND CONTROL SYSTEMS; PLASMA EMISSION; ROUGH SUBSTRATES; SILICON FILMS; THIN FILM SILICON; THIN-FILM SILICON SOLAR CELLS; TRANSPARENT SUBSTRATE; TWO WAVELENGTH;

AMORPHOUS FILMS; AMORPHOUS SILICON; FILM GROWTH; LIGHT SOURCES; MICROCRYSTALLINE SILICON; NANOSTRUCTURED MATERIALS; PLASMA DIAGNOSTICS; RAMAN SPECTROSCOPY; SILICON SOLAR CELLS;

PROCESS CONTROL;

EID: 80053615344     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.07.022     Document Type: Article

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