Ion-induced surface and bulk displacement threshold for epitaxial growth

Physica Status Solidi (A) Applied Research

Volumn 169, Issue 2, 1998, Pages 239-248

  Ma, Z Q ^a,b   Zheng, Y F ^a   Liu, B X ^b  

^a XINJIANG UNIVERSITY   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ARGON; ATOMS; EPITAXIAL GROWTH; HYDROGEN; ION BEAMS; ION BOMBARDMENT; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SURFACES;

ION BEAM ASSISTED EPITAXIAL LAYER; SURFACIAL MONOLAYER;

MONOLAYERS;

EID: 0032178942     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199810)169:2<239::AID-PSSA239>3.0.CO;2-F     Document Type: Article

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