Critical impact of gate dielectric interfaces on the contact resistance of high-performance organic field-effect transistors

Journal of Physical Chemistry C

Volumn 117, Issue 23, 2013, Pages 12337-12345

  Liu, Chuan ^a   Xu, Yong ^b   Li, Yun ^c   Scheideler, William ^d   Minari, Takeo ^a,e  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Inst de Microlectron et Photonique   (France)

^c NANJING UNIVERSITY   (China)

^d USA   (United States)

^e RIKEN   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING EFFECT; DEVICE CONFIGURATIONS; DIELECTRIC INTERFACE; GATE-DIELECTRIC INTERFACES; ORGANIC FIELD-EFFECT TRANSISTOR (OFETS); QUANTITATIVE LEVEL; SEMICONDUCTOR FILMS; STRUCTURAL DEFECT;

CONTACT RESISTANCE; DIELECTRIC MATERIALS; ORGANIC FIELD EFFECT TRANSISTORS;

GATE DIELECTRICS;

EID: 84879121843     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp4023844     Document Type: Article

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