Organic small molecule field-effect transistors with Cytop™ gate dielectric: Eliminating gate bias stress effects

Applied Physics Letters

Volumn 90, Issue 9, 2007, Pages

  Kalb, W L ^a   Mathis, T ^a   Haas, S ^a   Stassen, A F ^a   Batlogg, B ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; FLUORINE CONTAINING POLYMERS; GATE DIELECTRICS; HYSTERESIS; SINGLE CRYSTAL SURFACES; STRESS ANALYSIS;

CURRENT HYSTERESIS; GATE BIAS; ORGANIC FIELD EFFECT TRANSISTORS; SINGLE CRYSTAL TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 33847658220     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2709894     Document Type: Article

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