Transient effects controlling the charge carrier population of organic field effect transistor channels

Journal of Applied Physics

Volumn 107, Issue 10, 2010, Pages

  Chang, Hsiu Chuang ^a   Ruden, P Paul ^a   Liang, Yan ^a   Frisbie, C Daniel ^a  

^a University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODEL; CHANNEL LENGTH; CONDUCTING CHANNELS; DEVICE SIMULATIONS; DEVICE STRUCTURES; DISPLACEMENT CURRENT MEASUREMENTS; DISPLACEMENT CURRENTS; EFFECTIVE MOBILITIES; EMISSION RATES; EXPERIMENTAL DATA; INJECTED CHARGE CARRIERS; ORGANIC SEMICONDUCTOR; ORGANIC THIN FILM TRANSISTORS; STEADY STATE; TEMPERATURE DEPENDENCE; TIME-SCALES; TRANSIENT EFFECT; TRANSIENT PROCESS; TRANSIT TIME; TRANSPORT CHARACTERISTICS;

CHARGE CARRIERS; ELECTRIC CURRENT MEASUREMENT; ELECTRON MULTIPLIERS; FIELD EFFECT TRANSISTORS; MATHEMATICAL MODELS; SEMICONDUCTING ORGANIC COMPOUNDS; TEMPERATURE DISTRIBUTION; THIN FILM TRANSISTORS; TRANSPORT PROPERTIES;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 77952972910     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3368662     Document Type: Article

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