Influence of H2 O and O2 on threshold voltage shift in organic thin-film transistors: Deprotonation of SiOH on Si O2 gate-insulator surface

Applied Physics Letters

Volumn 92, Issue 9, 2008, Pages

  Kumaki, Daisuke ^a   Umeda, Tokiyoshi ^b   Tokito, Shizuo ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPROTONATION; ELECTRIC INSULATORS; GATES (TRANSISTOR); SILICA; THRESHOLD VOLTAGE;

GATE-INSULATOR SURFACE; ORGANIC THIN-FILM TRANSISTORS; VOLTAGE SHIFT;

THIN FILM TRANSISTORS;

EID: 40549144426     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2890853     Document Type: Article

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