Charge trapping induced current instability in pentacene thin film transistors: Trapping barrier and effect of surface treatment

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Miyadera, T ^a,b   Wang, S D ^b,c   Minari, T ^a,b   Tsukagoshi, K ^b,c   Aoyagi, Y ^a,b  

^a RIKEN   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC MICROSCOPES; AMPLITUDE MODULATION; FEES AND CHARGES; FINANCE; MISSILE BASES; SEMICONDUCTING ORGANIC COMPOUNDS; SURFACE CHARGE; SURFACE TREATMENT; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

AMERICAN INSTITUTE OF PHYSICS (AIP); BARRIER HEIGHT (BH); CURRENT INSTABILITIES; DEVICE OPERATIONS; INSULATOR SURFACES; MOBILE CHARGES; PENTACENE FILMS; PENTACENE THIN FILM TRANSISTORS (TFT); SELF ASSEMBLED MONOLAYER (SAMS); STRETCHED EXPONENTIAL; TEMPERATURE DEPENDENCE OF CURRENT; TRAPPING ENERGY;

CHARGE TRAPPING;

EID: 48249111879     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2949746     Document Type: Article

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