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Journal of Applied Physics

Volumn 104, Issue 8, 2008, Pages

Hole trap related hysteresis in pentacene field-effect transistors

(5) Ucurum, C a Goebel, H a Yildirim, F A b Bauhofer, W b Krautschneider, W b

a HELMUT SCHMIDT UNIVERSITY (Germany)

b HAMBURG UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTICITY; GATE DIELECTRICS; GATES (TRANSISTOR); HOLE TRAPS; HYSTERESIS; SEMICONDUCTING ORGANIC COMPOUNDS; TRANSIENT ANALYSIS; TRANSISTORS;

HYSTERESIS BEHAVIORS; LONG TIME CONSTANTS; OUTPUT CHARACTERISTICS; PENTACENE; PENTACENE FILMS; PENTACENE TRANSISTORS; RELIABLE MEASUREMENTS; TRANSIENT MEASUREMENTS; TRAPPING/DETRAPPING;

FIELD EFFECT TRANSISTORS;

EID: 55249113406 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2999643 Document Type: Article

Times cited : (72)

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