Optimal structure for high-performance and low-contact-resistance organic field-effect transistors using contact-doped coplanar and pseudo-staggered device architectures

Advanced Functional Materials

Volumn 22, Issue 21, 2012, Pages 4577-4583

  Darmawan, Peter ^a   Minari, Takeo ^a,b   Xu, Yong ^a   Li, Song Lin ^a   Song, Haisheng ^a   Chan, Meiyin ^a   Tsukagoshi, Kazuhito ^a,c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b RIKEN   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

contact resistance; FeCl 3; organic field effect transistors (OFETs); thienoacene

Indexed keywords

ACCESS RESISTANCE; CHANNEL REGION; DEVICE ARCHITECTURES; FECL 3; FIELD-EFFECT MOBILITIES; ON/OFF RATIO; OPTIMAL DEVICES; OPTIMAL STRUCTURES; ORGANIC TRANSISTOR; SEMICONDUCTOR INTERFACES; SUBTHRESHOLD SWING; THIENOACENE; TRANSFER LINES;

CONTACT RESISTANCE; IRON COMPOUNDS; ORGANIC FIELD EFFECT TRANSISTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING;

STRUCTURAL OPTIMIZATION;

EID: 84868534233     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201201094     Document Type: Article

References (45)

1. A. Tsumura, H. Koezuka, T. Ando, Appl. Phys. Lett. 1986, 49, 1210.
2. C. Resse, M. Roberts, M.-M. Ling, Z. Bao, Mater. Today 2004, 20.
3. Organic Field-Effect Transistors, (Eds:, Z. Bao, J. Locklin,) CRC Press, New York 2007.
4. H. Klauk, G. Schmid, W. Radlik, W. Weber, L. Zhou, C. D. Sheraw, J. A. Nichols, T. N. Jackson, Solid-State Electron. 2003, 47, 297.
5. a) G. Horowitz, P. Lang, M. Mottaghi, H. Aubin, Adv. Funct. Mater. 2004, 14, 1069
6. b) P. Pesavento, R. Chesterfield, C. Newman, C. Frisbie, J. Appl. Phys. 2004, 96, 7312
7. c) W. R. Silveira, J. A. Marohn, Phys. Rev. Lett. 2004, 93, 116104
8. d) B. Hamadani, D. Natelson, Appl. Phys. Lett. 2004, 84, 443
9. e) Y. Shen, M. W. Klein, D. B. Jacobs, J. C. Scott, G. G. Malliaras, Phys. Rev. Lett. 2001, 86, 3867
10. f) R. A. Street, A. Salleo, Appl. Phys. Lett. 2002, 81, 2887.
11. T. Minari, T. Miyadera, K. Tsukagoshi, Y. Aoyagi, H. Ito, Appl. Phys. Lett. 2007, 91, 053508.
12. S. D. Wang, T. Minari, T. Miyadera, K. Tsukagoshi, Y. Aoyagi, Appl. Phys. Lett. 2007, 91, 203508.
13. M. Kano, T. Minari, K. Tsukagoshi, Appl. Phys. Lett. 2009, 94, 143304.
14. Y. Xu, T. Minari, K. Tsukagoshi, J. A. Chroboczek, G. Ghibaudo, J. Appl. Phys 2010, 107, 114507.
15. H. Ishii, K. Sugiyama, E. Ito, S. Kazuhiko, Adv. Mater. 1999, 11, 605.
16. D. Kumaki, T. Umeda, S. Tokito, Appl. Phys. Lett. 2008, 92, 013301.
17. a) K. Takimiya, S. Shinamura, I. Osaka, E. Miyazaki, Adv. Mater. 2011, 23, 4347
18. b) D. J. Gundlach, L. L. Jia, T. N. Jackson, IEEE Electron. Device Lett. 2001, 22, 571
19. c) C. Bock, D. V. Pham, U. Kunze, D. Käfer, G. Witte, C. Wöll, J. Appl. Phys. 2006, 100, 114517.
20. I. Kymissis, C. Dimitrakopoulos, S. Purushothaman, IEEE Trans. Electron. Devices 2001, 48, 1060.
21. P. Darmawan, T. Minari, A. Kumatani, Y. Li, C. Liu, K. Tsukagoshi, Appl. Phys. Lett. 2012, 100, 013303.
22. B. Stadlober, U. Haas, H. Gold, A. Haase, G. Jakopic, G. Leising, N. Koch, S. Rentenberger, E. Zojer, Adv. Funct. Mater. 2007, 17, 2687.
23. M. Kitamura, S. Aomori, J. H. Na, Y. Arakawa, Appl. Phys. Lett. 2008, 93, 033313.
24. a) H. Minemawari, T. Yamada, H. Matsui, J. y. Tsutsumi, S. Haas, R. Chiba, R. Kumai, T. Hasegawa, Nature 2011, 475, 364
25. b) J. Takeya, M. Yamagishi, Y. Tominari, R. Hirahara, Y. Nakazawa, T. Nishikawa, T. Kawase, T. Shimoda, S. Ogawa, Appl. Phys. Lett. 2007, 90, 102120.
26. T. Minari, P. Darmawan, C. Liu, Y. Li, Y. Xu, K. Tsukagoshi, Appl. Phys. Lett. 2012, 100, 093303.
27. Y. Xu, R. Gwoziecki, I. Chartier, R. Coppard, F. Balestra, G. Ghibaudo, Appl. Phys. Lett. 2010, 97, 063302.
28. a) M. Xu, M. Nakamura, M. Sakai, K. Kudo, Adv. Mater. 2007, 19, 371
29. b) K. A. Singh, T. Young, R. D. McCullough, T. Kowalewski, L. M. Porter, Adv. Funct. Mater. 2010, 20, 2216.
30. H. Ma, H.-L. Yip, F. Huang, A. K.-Y. Jen, Adv. Funct. Mater. 2010, 20, 1371.
31. H. Klauk, Chem. Soc. Rev. 2010, 39, 2643.
32. S. D. Wang, Y. Yan, K. Tsukagoshi, Appl. Phys. Lett. 2010, 97, 063307.
33. O. Acton, M. Dubey, T. Widner, K. M. O'Malley, T.-W. Kim, G. G. Ting, D. Hutchins, J. E. Baio, T. C. Lovejoy, A. H. Gage, D. G. Castner, H. Ma, A. K.-Y. Jen, Adv. Funct. Mater. 2011, 21, 1476.
34. a) L. Bürgi, T. J. Richards, R. H. Friend, H. Sirringhaus, J. Appl. Phys 2003, 94, 6129
35. b) Y. Xu, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard, F. Balestra, G. Ghibaudo, Org. Electron. 2011, 2019.
36. T. Endo, T. Nagase, T. Kobayashi, K. Takimiya, M. Ikeda, H. Naito, Appl. Phys. Express 2010, 3, 121601.
37. a) U. Zschieschang, M. J. Kang, K. Takimiya, T. Sekitani, T. Someya, T. W. Canzler, A. Werner, J. Blochwitz-Nimoth, H. Klauk, J. Mater. Chem. 2012, 22, 4273
38. b) W. Xu, S.-W. Rhee, J. Mater. Chem. 2011, 21, 998
39. c) X. Li, W. T. T. Smaal, C. Kjellander, B. v. d. Putten, K. Gualandris, E. C. P. Smits, J. Anthony, D. J. Broer, P. W. M. Blom, J. Genoe, G. Gelinck, Org. Electron. 2011, 12, 1319.
40. M. C. J. M. Vissenberg, M. Matters, Phys. Rev. B: Condens. Matter 1998, 57, 12964.
41. a) G. Horowitz, Adv. Mater. 1998, 10, 365
42. b) E. J. Meijer, M. Matters, P. T. Herwig, D. M. d. Leeuw, T. M. Klapwijk, Appl. Phys. Lett. 2000, 76, 3433.
43. S. F. Nelson, Y. Y. Lin, D. J. Gundlach, T. N. Jackson, Appl. Phys. Lett. 1998, 72, 1854.
44. a) J. Soeda, Y. Hirose, M. Yamagishi, A. Nakao, T. Uemura, K. Nakayama, M. Uno, Y. Nakazawa, K. Takimiya, J. Takeya, Adv. Mater. 2011, 23, 3309
45. b) C. Liu, T. Minari, X. Lu, A. Kumatani, K. Takimiya, K. Tsukagoshi, Adv. Mater. 2010, 23, 523.