Highly enhanced charge injection in thienoacene-based organic field-effect transistors with chemically doped contact

Applied Physics Letters

Volumn 100, Issue 9, 2012, Pages

  Minari, Takeo ^a,b   Darmawan, Peter ^a   Liu, Chuan ^a   Li, Yun ^a   Xu, Yong ^a   Tsukagoshi, Kazuhito ^a,c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b RIKEN   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL DOPING; CHEMICALLY DOPED; CONTACT INTERFACE; DEPLETION-LAYER THICKNESS; DEVICE PERFORMANCE; FIELD-EFFECT MOBILITIES; GATE VOLTAGES; RESISTANCE REDUCTION; TRAP STATE;

CONTACT RESISTANCE; IRON COMPOUNDS; ORGANIC FIELD EFFECT TRANSISTORS;

INTERFACE STATES;

EID: 84863287546     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3690949     Document Type: Article

References (31)

1. Y. Shen, M. W. Klein, D. B. Jacobs, J. C. Scott, and G. G. Malliaras, Phys. Rev. Lett. 86, 3867 (2001). 10.1103/PhysRevLett.86.3867
2. R. A. Street and A. Salleo, Appl. Phys. Lett. 81, 2883 (2002). 10.1063/1.1512950
3. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, Solid-State Electron. 47, 259 (2003). 10.1016/S0038-1101(02)00204-6
4. H. Klauk, G. Schmid, W. Radlik, W. Weber, L. Zhou, C. D. Sheraw, J. A. Nichols, and T. N. Jackson, Solid-State Electron. 47, 297 (2003). 10.1016/S0038-1101(02)00210-1
5. G. Horowitz, P. Lang, M. Mottaghi, and H. Aubin, Adv. Funct. Mater. 14, 1069 (2004). 10.1002/(ISSN)1616-3028
6. P. V. Pesavento, R. J. Chesterfield, C. R. Newman, and C. D. Frisbie, J. Appl. Phys. 96, 7312 (2004). 10.1063/1.1806533
7. B. H. Hamadani and D. Natelson, Appl. Phys. Lett. 84, 443 (2004). 10.1063/1.1639945
8. W. R. Silveira and J. A. Marohn, Phys. Rev. Lett. 93, 116104 (2006). 10.1103/PhysRevLett.93.116104
9. T. Minari, T. Miyadera, K. Tsukagoshi, Y. Aoyagi, and H. Ito, Appl. Phys. Lett. 91, 053508 (2007). 10.1063/1.2759987
10. S. D. Wang, T. Minari, T. Miyadera, K. Tsukagoshi, and Y. Aoyagi, Appl. Phys. Lett. 91, 203508 (2007). 10.1063/1.2813640
11. M. Kano, T. Minari, and K. Tsukagoshi, Appl. Phys. Lett. 94, 143304 (2009). 10.1063/1.3115826
12. X. Yong, T. Minari, K. Tsukagoshi, J. A. Chroboczek, and G. Ghibaudo, J. Appl. Phys. 107, 114507 (2010). 10.1063/1.3432716
13. H. Ishii, K. Sugiyama, E. Ito, and K. Seki, Adv. Mater. 11, 605 (1999). 10.1002/(ISSN)1521-4095
14. D. Kumaki, T. Umeda, and S. Tokito, Appl. Phys. Lett. 92, 013301 (2007). 10.1063/1.2828711
15. I. Kymissis, C. D. Dimitrakopoulos, and S. Purushothaman, IEEE Trans. Electron Devices 48, 1060 (2001). 10.1109/16.925226
16. D. J. Gundlach, L. L. Jia, and T. N. Jackson, IEEE Electron Device Lett. 22, 571 (2001). 10.1109/55.974580
17. C. Bock, D. V. Pham1, U. Kunze, D. Käfer, G. Witte, and Ch. Wöll, J. Appl. Phys. 100, 114517 (2006). 10.1063/1.2400507
18. H. Sirringhaus, R. H. Friend, C. Wang, J. Leuninger, and K. Müllen, J. Mater. Chem. 9, 2095 (1999). 10.1039/a902679g
19. T. Yamamoto and K. Takimiya, J. Am. Chem. Soc. 129, 2224 (2007). 10.1021/ja068429z
20. J. Gao, R. Li, L. Li, Q. Meng, H. Jiang, H. Li, and W. Hu, Adv. Mater. 19, 3008 (2007). 10.1002/(ISSN)1521-4095
21. H. Ebata, T. Izawa, E. Miyazaki, K. Takimiya, M. Ikeda, H. Kuwabara, and T. Yui, J. Am. Chem. Soc. 129, 15732 (2007). 10.1021/ja074841i
22. T. Izawa, E. Miyazaki, and K. Takimiya, Adv. Mater. 20, 3388 (2008). 10.1002/adma.200800799
23. T. Minari, M. Kano, T. Miyadera, S. D. Wang, Y. Aoyagi, and K. Tsukagoshi, Appl. Phys. Lett. 94, 093307 (2009). 10.1063/1.3095665
24. T. Uemura, Y. Hirose, M. Uno, K. Takimiya, and J. Takeya, Appl. Phys. Exp. 2, 111501 (2009). 10.1143/APEX.2.111501
25. C. Liu, T. Minari, X. Lu, A. Kumatani, K. Takimiya, and K. Tsukagoshi, Adv. Mater. 23, 523 (2010). 10.1002/adma.201002682
26. J. K. Myeong, I. Doi, H. Mori, E. Miyazaki, K. Takimiya, M. Ikeda, and H. Kuwabara, Adv. Mater. 23, 1222 (2011). 10.1002/adma.201001283
27. H. Minemawari, T. Yamada, H. Matsui, J. Tsutsumi, S. Haas, R. Chiba, R. Kumai, and T. Hasegawa, Nature 475, 364 (2011). 10.1038/nature10313
28. Y. Chen, I. Shih, and S. Xiao, J. Appl. Phys. 96, 454 (2004). 10.1063/1.1760838
29. R. Schroeder, L. A. Majewski, and M. Grell, Appl. Phys. Lett. 84, 1004 (2004). 10.1063/1.1645993
30. F. Fujimori, K. Shigeto, T. Hamano, T. Minari, T. Miyadera, K. Tsukagoshi, and Y. Aoyagi, Appl. Phys. Lett. 90, 193507 (2007). 10.1063/1.2737418
31. Y. Xu, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard, F. Balestra, and G. Ghibaudo, Org. Electron. 12, 2019 (2011). 10.1016/j.orgel.2011.08.026