Correlation between grain size and device parameters in pentacene thin film transistors

Applied Physics Letters

Volumn 93, Issue 4, 2008, Pages

  Wang, S D ^a,b,c   Miyadera, T ^a,b,c   Minari, T ^a,b   Aoyagi, Y ^a,b   Tsukagoshi, K ^a,b,c  

^a RIKEN   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; CLARIFICATION; CRYSTAL GROWTH; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; SEMICONDUCTING ORGANIC COMPOUNDS; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

CHANNEL MOBILITIES; CHANNEL REGIONS; CONTACT REGIONS; CONTACT-RESISTANCE; DEVICE PARAMETERS; GENERAL APPROACH; GRAIN SIZES; GRAIN-SIZE DEPENDENCE; LAYER INTERFACES; METAL/ORGANIC INTERFACES; PENTACENE THIN FILM TRANSISTORS;

GRAIN (AGRICULTURAL PRODUCT);

EID: 49149114497     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2967193     Document Type: Article

References (13)

1. M. C. J. M. Vissenberg and M. Matters, Phys. Rev. B 0163-1829 10.1103/PhysRevB.57.12964 57, 12964 (1998).
2. G. Horowitz, M. E. Hajlaoui, and R. Hajlaoui, J. Appl. Phys. 0021-8979 10.1063/1.373091 87, 4456 (2000).
3. V. Podzorov, E. Menard, A. Borissov, V. Kiryukhin, J. A. Rogers, and M. E. Gershenson, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.93.086602 93, 086602 (2004).
4. S. D. Wang, T. Minari, T. Miyadera, Y. Aoyagi, and K. Tsukagoshi, Appl. Phys. Lett. 0003-6951 10.1063/1.2844857 92, 063305 (2008).
5. S. D. Wang, T. Minari, T. Miyadera, K. Tsukagoshi, and Y. Aoyagi, Appl. Phys. Lett. 0003-6951 10.1063/1.2813640 91, 203508 (2007).
6. G. Horowitz, P. Lang, M. Mottaghi, and H. Aubin, Adv. Funct. Mater. 1616-301X 10.1002/adfm.200305122 14, 1069 (2004).
7. I. Yagi, K. Tsukagoshi, and Y. Aoyagi, Appl. Phys. Lett. 0003-6951 10.1063/1.1645316 84, 813 (2004).
8. T. Minari, Y. Miyata, M. Terayama, T. Nemoto, T. Nishinaga, K. Komatsu, and S. Isoda, Appl. Phys. Lett. 0003-6951 10.1063/1.2179107 88, 083514 (2006).
9. N. Karl, Organic Electronic Materials (Springer, Berlin, 2001), Chap..
10. N. Yoneya, M. Noda, N. Hirai, K. Nomoto, M. Wada, and J. Kasahara, Appl. Phys. Lett. 0003-6951 10.1063/1.1814443 85, 4663 (2004).
11. M. Shtein, J. Mapel, J. B. Benziger, and S. R. Forrest, Appl. Phys. Lett. 0003-6951 10.1063/1.1491009 81, 268 (2002).
12. S. H. Jin, K. D. Jung, H. C. Shin, B. G. Park, and J. D. Lee, Synth. Met. 0379-6779 10.1016/j.synthmet.2005.11.012 156, 196 (2006).
13. P. V. Pesavento, K. P. Puntambekar, C. D. Frisbie, J. C. McKeen, and P. P. Ruden, J. Appl. Phys. 0021-8979 10.1063/1.2197033 99, 094504 (2006).