A scanning Kelvin probe study of charge trapping in zone-cast pentacene thin film transistors

Nanotechnology

Volumn 20, Issue 2, 2009, Pages

  Hallam, T ^a   Duffy, C M ^a   Minakata, T ^b   Ando, M ^a   Sirringhaus, H ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b ASAHI KASEI CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BUTENES; CHARGE TRAPPING; GATE DIELECTRICS; GATES (TRANSISTOR); OXYGEN; SCANNING; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; TURBULENT FLOW;

BENZOCYCLOBUTENE; ELECTRICALLY ACTIVE DEFECTS; KELVIN PROBE MICROSCOPIES; KELVIN PROBES; LOCAL PROBES; NEGATIVE GATES; PENTACENE; PENTACENE FIELD EFFECT TRANSISTORS; PENTACENE THIN FILM TRANSISTORS; POSITIVE CHARGES; POSITIVE GATE BIASES;

FIELD EFFECT TRANSISTORS;

OXYGEN; SILICON DIOXIDE;

ARTICLE; CRYSTALLIZATION; DISSOCIATION; ELECTRIC POTENTIAL; ELECTRON; FIELD EFFECT TRANSISTOR; FILM; INJECTION; MICROSCOPY; PRIORITY JOURNAL; SCREENING; SEMICONDUCTOR; STATISTICAL SIGNIFICANCE; STRESS; TEMPERATURE SENSITIVITY;

EID: 58149218267     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/2/025203     Document Type: Article

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