Electric-field-induced charge injection or exhaustion in organic thin film transistor

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 3, 2005, Pages

  Kiguchi, Manabu ^a,b   Nakayama, Manabu ^a   Shimada, Toshihiro ^a   Saiki, Koichiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; CONDUCTANCE; ELECTRIC CURRENT; ELECTRIC FIELD; EXHAUSTION; FILM; SEMICONDUCTOR;

EID: 15444367185     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.035332     Document Type: Article

References (15)

1. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1985).
2. H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, and K. Ohtani, Nature (London) 408, 944 (2000).
3. C. H. Ahn, S. Gariglio, P. Paruch, T. Tybell, L. Antognazza, and J.-M. Triscone, Science 284, 1152 (1999).
4. G) is injected only in the first layer at the interface.
5. A. Dodabalapur, L. Torsi, and H. E. Katz, Science 268, 270 (1995).
6. M. Kiguchi, M. Nakayama, K. Fujiwara, K. Ueno, T. Shimada, and K. Saiki, Jpn. J. Appl. Phys., Part 1 42, L1408 (2003).
7. 2 substrate completely with their molecular long axes parallel to the surface ("lying"), and some molecules grew on the first layer with their molecular long axes normal to the surface ("standing"); M. Nakayama, M. Kiguchi, and K. Saiki (unpublished).
8. E. H., Rhoderick, Monographs in Electrical and Electronic Engineering. Metal-Semiconductor Contacts (Clarendon, Oxford, UK, 1978).
9. This assumption is supported by the AFM results. The film nearly covered the substrate completely, although there were some grain boundaries. Furthermore the deviation of height in the island was about 2 nm, which corresponded to 1 monolayer thickness. These experimental results supports that the nearly ideal layer growth occurred under the present growth condition.
10. T. Komoda, Y. Endo, K. Kyuno, and A. Toriumi, Jpn. J. Appl. Phys., Part 1 41, 2767 (2002).
11. R. C. Haddon, A. S. Perel, R. C. Morris, T. T. M. Palstra, A. F. Hebard, and R. M. Fleming, Appl. Phys. Lett. 67, 121 (1995).
12. G, which was commonly observed in both cases. Therefore, the discussion in the text was not affected by choice of μ.
13. G. Horowitz, M. E. Hajlaoui, and R. Hajlaoui, J. Appl. Phys. 87, 4456 (2000).
14. F are intrinsic carrier density, intrinsic Fermi level, and Fermi level. Since the carrier density changes exponentially with the energy difference between intrinsic Fermi level and Fermi level, the small difference in the band bending would lead to large difference in distribution function of carriers. The band bending depends on dielectric constant of semiconductors.
15. V. L. Ginzburg and D. A. Kirzhnits, High-Temperature Superconductivity (Consultants Bureau, New York, 1982).