-
1
-
-
33749336982
-
Colloquium: Electronic transport in single-crystal organic transistors
-
DOI 10.1103/RevModPhys.78.973
-
M. E. Gershenson, V. Podzorov, and A. F. Morpurgo, Rev. Mod. Phys. 0034-6861 78, 973 (2006). 10.1103/RevModPhys.78.973 (Pubitemid 44496727)
-
(2006)
Reviews of Modern Physics
, vol.78
, Issue.3
, pp. 973-989
-
-
Gershenson, M.E.1
Podzorov, V.2
Morpurgo, A.F.3
-
2
-
-
72849136914
-
-
0031-9007, 10.1103/PhysRevLett.103.266601
-
S. Fratini and S. Ciuchi, Phys. Rev. Lett. 0031-9007 103, 266601 (2009). 10.1103/PhysRevLett.103.266601
-
(2009)
Phys. Rev. Lett.
, vol.103
, pp. 266601
-
-
Fratini, S.1
Ciuchi, S.2
-
3
-
-
76149106127
-
-
1616-301X, 10.1002/adfm.200900831
-
J. A. Letizia, J. Rivnay, A. Facchetti, M. A. Ratner, and T. J. Marks, Adv. Funct. Mater. 1616-301X 20, 50 (2010). 10.1002/adfm.200900831
-
(2010)
Adv. Funct. Mater.
, vol.20
, pp. 50
-
-
Letizia, J.A.1
Rivnay, J.2
Facchetti, A.3
Ratner, M.A.4
Marks, T.J.5
-
5
-
-
78751526963
-
-
0003-6951, 10.1063/1.3543900
-
L. Li, K. -S. Chung, and J. Jang, Appl. Phys. Lett. 0003-6951 98, 023305 (2011). 10.1063/1.3543900
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 023305
-
-
Li, L.1
Chung, K.-S.2
Jang, J.3
-
8
-
-
36149043972
-
-
0022-3719, 10.1088/0022-3719/16/22/020
-
G. Ghibaudo, D. Tsamakis, C. Papatriantafillou, G. Kamarinos, and E. Rokofillou, J. Phys. C 0022-3719 16, 4479 (1983). 10.1088/0022-3719/16/22/020
-
(1983)
J. Phys. C
, vol.16
, pp. 4479
-
-
Ghibaudo, G.1
Tsamakis, D.2
Papatriantafillou, C.3
Kamarinos, G.4
Rokofillou, E.5
-
9
-
-
79959368001
-
A transport study of carrier mobility in organic field-effect transistors
-
(submitted).
-
Y. Xu, M. Benwadih, R. Gwoziecki, R. Coppard, T. Minari, C. Liu, K. Tsukagoshi, J. A. Chroboczek, F. Balestra, and G. Ghibaudo, " A transport study of carrier mobility in organic field-effect transistors.," J. Appl. Phys. (submitted).
-
J. Appl. Phys.
-
-
Xu, Y.1
Benwadih, M.2
Gwoziecki, R.3
Coppard, R.4
Minari, T.5
Liu, C.6
Tsukagoshi, K.7
Chroboczek, J.A.8
Balestra, F.9
Ghibaudo, G.10
-
10
-
-
79956017820
-
Generalized Einstein relation for disordered semiconductors-implications for device performance
-
DOI 10.1063/1.1461419
-
Y. Roichman and N. Tessler, Appl. Phys. Lett. 0003-6951 80, 1948 (2002). 10.1063/1.1461419 (Pubitemid 34326249)
-
(2002)
Applied Physics Letters
, vol.80
, Issue.11
, pp. 1948
-
-
Roichman, Y.1
Tessler, N.2
-
11
-
-
77953644849
-
-
0021-8979, 10.1063/1.3432716
-
Y. Xu, T. Minari, K. Tsukagoshi, J. A. Chroboczek, and G. Ghibaudo, J. Appl. Phys. 0021-8979 107, 114507 (2010). 10.1063/1.3432716
-
(2010)
J. Appl. Phys.
, vol.107
, pp. 114507
-
-
Xu, Y.1
Minari, T.2
Tsukagoshi, K.3
Chroboczek, J.A.4
Ghibaudo, G.5
-
12
-
-
0000606264
-
-
0556-2805, 10.1103/PhysRevB.57.12964
-
M. C. J. M. Vissenberg and M. Matters, Phys. Rev. B 0556-2805 57, 12964 (1998). 10.1103/PhysRevB.57.12964
-
(1998)
Phys. Rev. B
, vol.57
, pp. 12964
-
-
Vissenberg, M.C.J.M.1
Matters, M.2
-
13
-
-
0000686239
-
Temperature-independent transport in high-mobility pentacene transistors
-
DOI 10.1063/1.121205, PII S0003695198008158
-
S. F. Nelson, Y. Y. Lin, D. J. Gundlach, and T. N. Jackson, Appl. Phys. Lett. 0003-6951 72, 1854 (1998). 10.1063/1.121205 (Pubitemid 128671482)
-
(1998)
Applied Physics Letters
, vol.72
, Issue.15
, pp. 1854-1856
-
-
Nelson, S.F.1
Lin, Y.-Y.2
Gundlach, D.J.3
Jackson, T.N.4
-
14
-
-
0001000955
-
-
0021-8979, 10.1063/1.373091
-
G. Horowitz, M. E. Hajlaoui, and R. Hajlaoui, J. Appl. Phys. 0021-8979 87, 4456 (2000). 10.1063/1.373091
-
(2000)
J. Appl. Phys.
, vol.87
, pp. 4456
-
-
Horowitz, G.1
Hajlaoui, M.E.2
Hajlaoui, R.3
|