Chemical and physical sensing by organic field-effect transistors and related devices

Advanced Materials

Volumn 22, Issue 34, 2010, Pages 3799-3811

  Someya, Takao ^b   Dodabalapur, Ananth ^c   Huang, Jia ^a   See, Kevin C ^a   Katz, Howard E ^a  

^a JOHNS HOPKINS UNIVERSITY   (United States)

^b UNIVERSITY OF TOKYO   (Japan)

^c The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL CIRCUITS; ELECTRONIC INFORMATION; ENVIRONMENTAL CHEMICALS; IN-FIELD; INPUT SIGNAL; MATERIAL FEATURES; NON-COVALENT INTERACTION; ORGANIC ELECTRONIC MATERIALS; ORGANIC SEMICONDUCTOR FILMS; PHYSICAL STIMULUS;

CHEMICAL DETECTION; FIELD EFFECT TRANSISTORS; ORGANIC CHEMICALS; PHOTOEXCITATION; SEMICONDUCTING ORGANIC COMPOUNDS;

ORGANIC FIELD EFFECT TRANSISTORS;

NANOMATERIAL; NAPHTHACENE DERIVATIVE; ORGANIC COMPOUND; PENTACENE;

ARTICLE; CHEMISTRY; MAGNETISM; SEMICONDUCTOR; ULTRASTRUCTURE;

MAGNETICS; NANOSTRUCTURES; NAPHTHACENES; ORGANIC CHEMICALS; SEMICONDUCTORS; TRANSISTORS, ELECTRONIC;

EID: 77956971211     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.200902760     Document Type: Article

References (45)

1. M. E. Roberts, A. N. Sokolov, Z. N. Bao, J. Mater. Chem. 2009, 19, 3351.
2. G. Horowitz, R. Hajlaoui, P. Delannoy, J. Phys. III 1995, 5, 355.
3. R. A. Street, J. E. Northrup, A. Salleo, Phys. Rev. B 2005, 71.
4. G. Horowitz, J. Mater. Res. 2004, 19, 1946.
5. N. Tessler, Y. Preezant, N. Rappaport, Y. Roichman, Adv. Mater. 2009, 21, 1.
6. H. Graaf, D. Schlettwein, J. Appl. Phys. 2006, 100, 126104.
7. D. Li, E. Borkent, R. Nortrup, H. Moon, H. Katz, Z. Bao, Appl. Phys. Lett. 2005, 86.
8. L. Torsi, F. Marinelli, M. D. Angione, A. Dell'Aquila, N. Cioffi, E. De Giglio, L. Sabbatini, Org. Electron. 2009, 10, 233.
9. R. D. Yang, T. Gredig, C. N. Colesniuc, J. Park, I. K. Schuller, W. C. Trogler, A. C. Kummel, Appl. Phys. Lett. 2007, 90.
10. F. I. Bohrer, C. N. Colesniuc, J. Park, M. E. Ruidiaz, I. K. Schuller, A. C. Kummel, W. C. Trogler, J. Am. Chem. Soc. 2009, 131, 478.
11. F. Liao, C. Chen, V. Subramanian, Sens. Actuators B 2005, 107, 849.
12. J. Huang, J. Miragliotta, A. Becknell, H. E. Katz, J. Am. Chem. Soc. 2007, 129, 9366.
13. L. Torsi, M. C. Tanese, N. Cioffi, M. C. Gallazzi, L. Sabbatini, P. G. Zambonin, G. Raos, S. V. Meille, M. M. Giangregorio, J. Phys. Chem. B 2003, 107, 7589.
14. K. C. See, A. Becknell, J. Miragliotta, H. E. Katz, Adv. Mater. 2007, 19, 3322.
15. L. Torsi, G. M. Farinola, F. Marinelli, M. C. Tanese, O. H. Omar, L. Valli, F. Babudri, F. Palmisano, P. G. Zambonin, F. Naso, Nat. Mater. 2008, 7, 412.
16. M. C. Tanese, L. Torsi, N. Cioffi, L. A. Zotti, D. Colangiuli, G. M. Farinola, F. Babudri, F. Naso, M. M. Giangregorio, L. Sabbatini, P. G. Zambonin, Sens. Actuators B 2004, 100, 17.
17. R. S. Dudhe, S. P. Tiwari, H. N. Raval, M. A. Khaderbad, R. Singh, J. Sinha, M. Yedukondalu, M. Ravikanth, A. Kumar, V. R. Rao, Appl. Phys. Lett. 2008, 93, 263306.
18. S. Sharma, L. Wang, C. Burham, D. Fine, A. Dodabalapur, presented at IEDM Tech. Digest, Washington, DC, December 2005.
19. B. Crone, A. Dodabalapur, A. Gelperin, L. Torsi, H. E. Katz, A. J. Lovinger, Z. Bao, Appl. Phys. Lett. 2001, 78, 2229.
20. Y. T. Jeong, B. H. Cobb, S. D. Lewis, A. Dodabalapur, S. F. Lu, A. Facchetti, T. J. Marks, Appl. Phys. Lett. 2008, 93, 3.
21. J. Huang, J. Sun, H. E. Katz, Adv. Mater. 2008, 20, 2567.
22. L. Wang, D. Fine, A. Dodabalapur, Appl. Phys. Lett. 2004, 85, 6386.
23. T. Someya, H. E. Katz, A. Gelperin, A. J. Lovinger, A. Dodabalapur, Appl. Phys. Lett. 2002, 81, 3079.
24. L. Torsi, A. J. Lovinger, B. Crone, T. Someya, A. Dodabalapur, H. E. Katz, A. Gelperin, J. Phys. Chem. B 2002, 106, 12563.
25. D. Fine, L. Wang, D. Basu, A. Dodabalapur, J. Appl. Phys. 2007, 101, 054515
26. L. Torsi, A. Tafuri, N. Cioffi, M. C. Gallazzi, A. Sassella, L. Sabbatini, P. G. Zambonin, Sens. Actuators B 2003, 257.
27. H. Ishii, K. Seki, IEEE Trans. Electron Devices 1997, 44, 1295.
28. H. Ishii, K. Sugiyama, E. Ito, K. Seki, Adv. Mater. 1999, 11, 605.
29. T. Someya, T. Sekitani, S. Iba, Y. Kato, H. Kawaguchi, T. Sakurai, Proc. Natl. Acad. Sci. USA 2004, 101, 9966;
30. T. Someya, Y. Kato, T. Sekitani, S. Iba, Y. Noguchi, Y. Murase, H. Kawaguchi, T. Sakurai, Proc. Natl. Acad. Sci. USA 2005, 102, 12321.
31. T. Someya, Y. Kato, S. Iba, T. Sekitani, H. Kawaguchi, T. Sakurai, IEEE Trans. Electron Devices 2005, 52, 2502.
32. Y. Kato, T. Sekitani, Y. Noguchi, M. Takamiya, T. Sakurai, T. Someya, presented at the Technical Digest of 2008 IEEE Int. Electron Devices Meeting (IEDM), San Francisco, December 15-17, 2008.
33. T. Sekitani, M. Takamiya, Y. Noguchi, S. Nakano, Y. Kato, T. Sakurai, T. Someya, Nat. Mater. 2007, 6, 413.
34. T. Sekitani, Y. Noguchi, K. Hata, T. Fukushima, T. Aida, T. Someya, Science 2008, 321 1468
35. S. Iijima, T. Ichihashi, Nature 1993, 363, 603.
36. K. Hata, D. N. Futaba, K. Mizuno, T. Namai, M. Yumura, S. Iijima, Science 2004, 306, 1362.
37. T. Fukushima, A. Kosaka, Y. Ishimura, T. Yamamoto, T. Takigawa, N. Ishii, T. Aida, Science 2003, 300, 2072.
38. E. D. Light, R. E. Davidsen, J. O. Fiering, T. A. Hruschka, S. W. Smith, Ultrasonic Imaging 1998, 20, 1.
39. S. W. Smith, H. G. Pavy, Jr., O. T. von Ramm, IEEE Trans. Ultrason. Ferroelect. Freq. Control 1991, 38, 100.
40. G. R. Lockwood, J. R. Talman, S. S. Brunke, IEEE Trans. Ultrason. Ferroelect. Freq. Control 1998, 45, 980.
41. A. Austeng, S. Holm, IEEE Trans. Ultrason. Ferroelect. Freq. Control 2002, 49, 1073.
42. S. W. Smith, K. Chu, S. F. Idriss, N. M. Ivancevich, E. D. Light, P. D. Wolf, Ultrasound Med. Biol. 2004, 30, 1365.
43. T. Furukawa, Phase Transitions 1989, 18, 143.
44. L. Ibos, A. Bernes, C. Lacabanne, Ferroelectrics 2005, 320, 483.
45. T. Rauch, M. Böber, S. F. Tedde, J. Fürst, M. V. Kovalenko, G. Hesser, U. Lemmer, W. Heiss, O. Hayden, Nat. Photon. 2009, 3, 332.