Bias-stress effects in organic field-effect transistors based on self-assembled monolayer nanodielectrics

Physical Chemistry Chemical Physics

Volumn 13, Issue 32, 2011, Pages 14387-14393

  Colléaux, Florian ^a   Ball, James M ^a   Wöbkenberg, Paul H ^a   Hotchkiss, Peter J ^b   Marder, Seth R ^b   Anthopoulos, Thomas D ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOMATERIAL; PHOSPHONIC ACID DERIVATIVE;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMICAL STRUCTURE; CHEMISTRY; SEMICONDUCTOR; STEREOISOMERISM;

MEMBRANES, ARTIFICIAL; MOLECULAR STRUCTURE; NANOSTRUCTURES; PHOSPHONIC ACIDS; SEMICONDUCTORS; STEREOISOMERISM; TRANSISTORS, ELECTRONIC;

EID: 80051678363     PISSN: 14639076     EISSN: None     Source Type: Journal    
DOI: 10.1039/c1cp20769e     Document Type: Article

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