Hall-effect measurements probing the degree of charge-carrier delocalization in solution-processed crystalline molecular semiconductors

Physical Review Letters

Volumn 107, Issue 6, 2011, Pages

  Chang, Jui Fen ^a   Sakanoue, Tomo ^a   Olivier, Yoann ^b   Uemura, Takafumi ^c   Dufourg Madec, Marie Beatrice ^d   Yeates, Stephen G ^d   Cornil, Jérôme ^b   Takeya, Jun ^c   Troisi, Alessandro ^e   Sirringhaus, Henning ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF MONS   (Belgium)

^c OSAKA UNIVERSITY   (Japan)

^d UNIVERSITY OF MANCHESTER   (United Kingdom)

^e UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DELOCALIZATIONS; DRIFT MOBILITIES; HALL EFFECT MEASUREMENT; HALL MEASUREMENTS; HALL RESISTANCE; INTERMOLECULAR PACKING; INTRAMOLECULAR STRUCTURE; MOLECULAR LEVELS; MOLECULAR SEMICONDUCTORS; OPTICAL SPECTROSCOPY; PENTACENES; SOLUTION-PROCESSED; STRUCTURE PROPERTY RELATIONSHIPS; THEORETICAL SIMULATION; THERMAL LATTICES;

CRYSTALLINE MATERIALS; GALVANOMAGNETIC EFFECTS; HALL MOBILITY;

CARRIER MOBILITY;

EID: 79961118766     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.107.066601     Document Type: Article

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