Gate voltage dependent mobility of oligothiophene field-effect transistors

Journal of Applied Physics

Volumn 85, Issue 6, 1999, Pages 3202-3206

  Horowitz, Gilles ^a   Hajlaoui, Riadh ^a   Fichou, Denis ^a   El Kassmi, Ahmed ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000034240     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369661     Document Type: Article

References (23)

1. X. Z. Peng, G. Horowitz, D. Fichou, and F. Garnier, Appl. Phys. Lett. 57, 2013 (1990).
2. F. Garnier, A. Yassar, R. Hajlaoui, G. Horowitz, F. Deloffre, B. Servet, S. Ries, and P. Alnot, J. Am. Chem. Soc. 115, 8716 (1993).
3. A. Dodabalapur, L. Torsi, and H. E. Katz, Science 268, 270 (1995).
4. D. J. Gundlach, Y. Y. Lin, T. N. Jackson, S. F. Nelson, and D. G. Schlom, IEEE Electron Device Lett. 18, 87 (1997).
5. E. A. Silinch, Organic Molecular Crystals (Springer, Berlin, 1980).
6. M. Pope and C. E. Swenberg, Electronic Processes in Organic Crystals (Oxford University Press, New York, 1982).
7. J. Simon and J. J. André, Molecular Semiconductors (Springer, Berlin, 1985).
8. N. Karl, J. Marktanner, R. Stehle, and W. Warta, Synth. Met. 42, 2473 (1991).
9. G. Horowitz, R. Hajlaoui, and P. Delannoy, J. Phys. III 5, 355 (1995).
10. A. R. Brown, C. P. Jarrett, D. M. de Leeuw, and M. Matters, Synth. Met. 88, 37 (1997).
11. Y. Y. Lin, D. J. Gundlach, and T. N. Jackson, Mater. Res. Soc. Symp. Proc. 413, 413 (1996).
12. R. Hajlaoui, G. Horowitz, F. Garnier, A. Arce-Brouchet, L. Laigre, A. El Kassmi, F. Demanze, and F. Kouki, Adv. Mater. 9, 389 (1997).
13. R. Hajlaoui, D. Fichou, G. Horowitz, B. Nessakh, M. Constant, and F. Garnier, Adv. Mater. 9, 557 (1997).
14. S. Jain, IEE Proc., Part I: Solid-State Electron Devices 135, 162 (1988).
15. A. R. Brown, D. M. Deleeuw, E. E. Havinga, and A. Pomp, Synth. Met. 68, 65 (1994).
16. G. Horowitz and P. Delannoy, J. Appl. Phys. 70, 469 (1991).
17. M. W. Wu and E. M. Conwell, Chem. Phys. 266, 363 (1997).
18. M. C. J. M. Vissenberg and M. Matters, Phys. Rev. B 57, 12964 (1998).
19. L. Torsi, A. Dodabalapur, L. J. Rothberg, A. W. P. Fung, and H. E. Katz, Phys. Rev. B 57, 2271 (1998).
20. G. Horowitz, R. Hajlaoui, R. Bourguiga, and M. Hajlaoui, International Conference on Synthetic Metals, Montpellier (France), 12-18 July 1998 [Synth. Met. (to be published)].
21. G. Horowitz, R. Hajlaoui, R. Bourguiga, and M. Hajlaoui, International Conference on Synthetic Metals, Montpellier (France), 12-18 July 1998 [Synth. Met. (to be published)].
22. S. F. Nelson, Y. Y. Lin, D. J. Gundlach, and T. N. Jackson, Appl. Phys. Lett. 72, 1854 (1998).
23. T. Holstein, Ann. Phys. 8, 343 (1959).