Dependence of pentacene crystal growth on dielectric roughness for fabrication of flexible field-effect transistors

ACS Applied Materials and Interfaces

Volumn 2, Issue 2, 2010, Pages 391-396

  Yang, Hoichang ^a   Yang, Chanwoo ^b   Kim, Se Hyun ^b   Jang, Mi ^a   Park, Chan Eon ^b  

^a Inha University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Conducting AFM; Field effect transistor; Pentacene; Surface roughness; X ray diffraction

Indexed keywords

AL FOIL; BI-LAYER; CONDUCTING AFM; DIELECTRIC ROUGHNESS; DIELECTRIC SURFACE; ELECTROLYTIC ETCHING; GATE ELECTRODES; IN-PLANE; LOW OPERATING VOLTAGE; OUT-OF-PLANE; PENTACENE CRYSTALS; PENTACENE FILM; PENTACENES;

ALUMINUM; ALUMINUM FOIL; ATOMIC FORCE MICROSCOPY; CONDUCTIVE FILMS; CRYSTAL GROWTH; DIELECTRIC MATERIALS; DIFFRACTION; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); HOLE MOBILITY; MESFET DEVICES; METAL ANALYSIS; STYRENE; SURFACE PROPERTIES; X RAY DIFFRACTION; X RAYS;

SURFACE ROUGHNESS;

EID: 84862833404     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am900652h     Document Type: Article

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