Tungsten-based pillar deposition by helium ion microscope and beam-induced substrate damage

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 31, Issue 3, 2013, Pages

  Kohama, Kazuyuki ^a,c   Iijima, Tomohiko ^a   Hayashida, Misa ^b   Ogawa, Shinichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DEPOSITION; ION BEAMS; ION MICROSCOPES; IONS; SILICON; SUBSTRATES; TUNGSTEN; TUNGSTEN CARBIDE;

BEAM-INDUCED DEPOSITION; DEPOSITION PARAMETERS; FACE-CENTERED CUBIC; GAS INJECTION SYSTEM; HELIUM ION MICROSCOPE (HIM); HELIUM ION MICROSCOPES; SILICON SUBSTRATES; TUNGSTEN HEXACARBONYL;

INTERFACES (MATERIALS);

EID: 84878358143     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4800983     Document Type: Article

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