TEM analysis of blisters on silicon surface formed by hydrogen ion irradiation

Physica Scripta T

Volumn T108, Issue , 2004, Pages 19-22

  Muto, S ^a   Tanabe, T ^a   Igarashi, S ^a,b  

^a NAGOYA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; ION BOMBARDMENT; PLASTIC DEFORMATION; TRANSMISSION ELECTRON MICROSCOPY;

HIGH ENERGY GAS MOLECULES; HYDROGEN ION IRRADIATION;

SILICON;

EID: 27744518584     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1238/Physica.Topical.108a00019     Document Type: Conference Paper

References (13)

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3. Igarashi S, Muto S, Tanabe T and Maruyama T 2001 Mater. Trans. JIM 42 2131
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5. Igarashi S, Muto S and Tanabe T 2001 J. Japan. Inst. Metals 65 423
6. Williams D B and Carter C B 1996 Transmission Electron Microscopy: a Textbook for Materials Science (Plenum, New York) p165
7. Muto S, Tanabe T and Maruyama T Mater. Trans. JIM submitted
8. Muto S et al unpublished work
9. Katabuchi T, Kawachi N and Tagishi Y 1999 J. Appl. Phys. 86 3030
10. Kaibyshev O A 2002 Mater. Sci. Eng. A 324 96 and references therein
11. Egerton R F 1996 Electron Energy-Loss Spectroscopy in the Electron Microscope 2nd edn (Plenum, New York) p 165, 186
12. Nakahara H, Hishida T and Ichimiya A 2003 Appl. Surf. Sci. in press
13. Alberty R A and Silbey R J 1992 Physical Chemistry (John Wiley & Sons, New York) p18