Development of new FIB technology for EUVL mask repair

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7969, Issue , 2011, Pages

  Aramaki, Fumio ^a   Ogawa, Takashi ^a   Matsuda, Osamu ^a   Kozakai, Tomokazu ^a   Sugiyama, Yasuhiko ^a   Oba, Hiroshi ^a   Yasaka, Anto ^a   Amano, Tsuyoshi ^b   Shigemura, Hiroyuki ^b   Suga, Osamu ^b  

^a SII NANOTECHNOLOGY INC   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

defect; EUVL; FIB; GFIS; hydrogen; ion beam; mask; repair

Indexed keywords

ETCHING RATE; EUVL; FIB; GAS FIELDS; GFIS; HYDROGEN IONS; MASK REPAIR; REPAIR TECHNOLOGY;

ELECTRON BEAMS; ETCHING; EXTREME ULTRAVIOLET LITHOGRAPHY; GAS INDUSTRY; HYDROGEN; IMAGE RESOLUTION; ION BEAMS; ION SOURCES; LIQUID METALS; METAL IONS; PHOTOMASKS; TECHNOLOGY;

REPAIR;

EID: 79957957040     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.879609     Document Type: Conference Paper

References (5)

1. T. Amano et al., "Study of EUVL mask defect repair using FIB-GAE method", Proc. SPIE 7122, 71222H (2008)
2. T. Amano et al., "FIB mask repair technology for EUV mask", Proc. SPIE 7379, 73792L (2009)
3. S. Kanamitsu et al., "Prospect of EUV mask repair technology using e-beam tool", Proc. SPIE 7823, 782322 (2010)
4. B. W. Ward et al., "Helium ion microscope: A new tool for nanoscale microscopy and metrology", J. Vac. Sci. Technol. B 24, 2871 (2006)
5. D. Maas et al., "Nanofabrication with a helium ion microscope", Proc. SPIE 7638, 763814 (2010)