Understanding the kinetics and nanoscale morphology of electron-beam- induced deposition via a three-dimensional monte carlo simulation: the effects of the precursor molecule and the deposited material

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Volumn 4, Issue 9, 2008, Pages 1382-1389

  Smith, Daryl A ^a   Fowlkes, Jason D ^b   Rack, Philip D ^a  

^a University of Tennessee   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Deposition; Modeling; Monte Carlo simulations; Nanolithography; Nanowires

Indexed keywords

ATOMS; FLOW INTERACTIONS; MONTE CARLO METHODS; MOSFET DEVICES; NONMETALS; NUMERICAL ANALYSIS; SECONDARY EMISSION; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON COMPOUNDS; THREE DIMENSIONAL; TUNGSTEN;

DEPOSITION; ELECTRON INTERACTIONS; ELECTRON-BEAM PARAMETERS; ELECTRON-BEAM-INDUCED DEPOSITION; LATERAL GROWTH RATE; MATERIAL PARAMETERS; MODELING; MONTE CARLO SIMULATION; MONTE CARLO SIMULATIONS; NANO-PILLARS; NANOLITHOGRAPHY; NANOSCALE MORPHOLOGIES; NANOWIRES; ONE-DIMENSIONAL; SECONDARY ELECTRONS; SILICON OXIDES; SIMULATED RESULTS; SURFACE COVERAGES; TETRAETHYORTHOSILICATE; TYPE II; VERTICAL GROWTH;

ELECTRONS;

NANOMATERIAL; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; COMPUTER SIMULATION; ELECTRON; GAS; KINETICS; MONTE CARLO METHOD;

COMPUTER SIMULATION; ELECTRONS; GASES; KINETICS; MONTE CARLO METHOD; NANOSTRUCTURES; SILICON DIOXIDE;

EID: 52649124904     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200701133     Document Type: Article

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