SCOPUS 정보 검색 플랫폼

Volumn 49, Issue 4 PART 2, 2010, Pages

Helium ion secondary electron mode microscopy for interconnect material imaging

(7) Ogawa, Shinichi a,c Thompson, William b Stern, Lewis b Scipioni, Larry b Notte, John b Farkas, Lou b Barriss, Louise b

a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC (Japan)

b Carl Zeiss Vision Inc USA (United States)

c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER INTERCONNECTS; DUAL DAMASCENE; HELIUM ION; INTERCONNECT MATERIALS; INTERCONNECT STRUCTURES; LOW K DIELECTRICS; OBSERVATION METHOD; SECONDARY ELECTRONS; SUBNANOMETER RESOLUTION; ULTRA LARGE SCALE INTEGRATED CIRCUITS;

DIELECTRIC MATERIALS; HELIUM; IMAGE RESOLUTION; IMAGING TECHNIQUES; ION MICROSCOPES; SECONDARY EMISSION; ULSI CIRCUITS;

IONS;

EID: 77952708929 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.04DB12 Document Type: Article

Times cited : (20)

References (10)

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