Structural characterization of He ion microscope platinum deposition and sub-surface silicon damage

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 4, 2012, Pages

  Drezner, Yariv ^a   Greenzweig, Yuval ^a   Fishman, Daniel ^b   Van Veldhoven, Emile ^c   Maas, Diederik J ^c   Raveh, Amir ^a   Livengood, Richard H ^d  

^a INTEL CORPORATION   (Israel)

^b Intel Israel (74) Ltd   (Israel)

^c TNO   (Netherlands)

^d INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITS; ELECTRON BEAMS; ION BEAMS; ION MICROSCOPES; IONS; SILICON WAFERS; X RAY SPECTROSCOPY;

BEAM CURRENTS; CIRCUIT MODIFICATION; DARK FIELD; ELECTRON BEAM-INDUCED DEPOSITION; ENERGY DISPERSIVE X RAY SPECTROSCOPY; HELIUM ION; HELIUM ION BEAMS; ION BEAM CURRENTS; LAYER THICKNESS; LOW BEAM; METAL CONTENT; METAL PURITY; NANOMACHINING; PT DEPOSITION; STRUCTURAL CHARACTERIZATION; SUB-SURFACE DAMAGE; SUB-SURFACES; SUBMICRON; SUBSTRATE STRUCTURE; TEM IMAGES;

PLATINUM;

EID: 84864245166     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4732074     Document Type: Article

References (56)

1. S. Haehn and T. S. Kalkur, J. Electron. Test.: Theory Appl. 11, 273 (1997). 10.1023/A:1008222607359
2. D. M. Donnet and H. Roberts, Microscopy of Semiconducting Materials (Springer, Berlin, 2005), pp. 403-408.
3. R. Young and M. V. Moore, Introduction to Focused Ion Beams (Springer, New York, 2005), pp. 247-268.
4. J. Orloff, M. Utlaut, and L. Swanson, High Resolution Focused Ion Beam (Kluwer/Plenum, New York, 2003), p. 136.
5. N. Yao, Focused Ion Beam Systems-Basics and Applications (Cambridge University Press, Cambridge, UK, 2007), pp. 268, 102-103.
6. A. A. Tseng, Small 1, 924 (2005). 10.1002/smll.200500113
7. S. Reyntjens and R. Puers, J. Micromech. Microeng. 11, 287 (2001). 10.1088/0960-1317/11/4/301
8. Y. Greenzweig, Y. Drezner, A. Raveh, O. Sidorov, and R. H. Livengood, J. Vac. Sci. Technol. B 29, 021202 (2011). 10.1116/1.3554904
9. F. Mosselveld, V. V. Makarov, T. R. Lundquist, D. P. Griffis, and P. E. Russell, J. Microsc. 214, 246 (2004). 10.1111/j.0022-2720.2004.01337.x
10. T. Lundquist and M. Thompson, Microelectronics Failure Analysis Desk Reference, 6th ed. (ASM International, Ohio, 2011), pp. 594-606.
11. R. H. Livengood, Y. Greenzweig, T. Liang, and M. Grumski, J. Vac. Sci. Technol. B 25, 2547 (2007). 10.1116/1.2794319
12. J. Melngailis, Proceedings of the 2001 Particle Accelerator Conference, Chicago, Vol. 1, pp. 76-80.
13. V. N. Tondare, J. Vac. Sci. Technol. A 23, 1498 (2005). 10.1116/1.2101792
14. B. W. Ward, J. A. Notte, and N. P. Economou, J. Vac. Sci. Technol. B 24, 2871 (2006). 10.1116/1.2357967
15. H. S. Kuo, I. S. Hwang, T. Y. Fu, Y. C. Lin, C. C. Chang, and T. T. Tsong, Jpn. J. Appl. Phys. 45, 8972 (2006). 10.1143/JJAP.45.8972
16. J. L. Hanssen, S. B. Hill, J. Orloff, and J. J. McClelland, Nano Lett. 8, 2844 (2008). 10.1021/nl801472n
17. J. L. Hanssen, J. J. McClelland, E. A. Dakin, and M. Jacka, Phys. Rev. A 74, 063416 (2006). 10.1103/PhysRevA.74.063416
18. M. P. Reijnders, N. Debernardi, S. B. van der Geer, P. H. A. Mutsaers, E. J. D. Vredenbregt, and O. J. Luiten, Phys. Rev. Lett. 105, 034802 (2010). 10.1103/PhysRevLett.105.034802
19. R. H. Livengood, S. Tan, Y. Greenzweig, J. Notte, and S. McVey, J. Vac. Sci. Technol. B 27, 3244 (2009). 10.1116/1.3237101
20. L. Bischoff, Ultramicroscopy 103, 59 (2005). 10.1016/j.ultramic.2004.11. 020
21. B. M. U. Scherzer, Sputtering by Particle Bombardment II, Topics in Applied Physics Vol. 52 (Springer, Berlin, 1983), pp. 271-355.
22. J. Morgan, J. Notte, R. Hill, and B. Ward, Microsc. Today 14, 24 (2006).
23. B. Ward, J. A. Notte, and N. P. Economou, Photonics Spectra 8, (2007). Available at: http://www.photonics.com/Article.aspx?AID=30461.
24. A. E. Vladár, M. T. Postek and B. Ming, Microsc. Today 17, 6 (2009).
25. L. Scipioni, L. Stern, and J. A. Notte, Microsc. Today, 15, 12 (2007).
26. L. Scipioni, C. A. Sanford, J. Notte, B. Thompson, and S. McVey, J. Vac. Sci. Technol. B 27, 3250 (2009). 10.1116/1.3258634
27. D. J. Maas, E. W. van der Drift, E. van Veldhoven, J. Meessen, M. Rudneva, and P. F. A. Alkemade, Mater. Res. Soc. Symp. Proc. 1354, 33 (2011). 10.1557/opl.2011.1407
28. V. Sidorkin, E. van Veldhoven, E. van der Drift, P. F. A. Alkemade, H. Salemink, and D. J. Maas, J. Vac. Sci. Technol. B 27, L18 (2009). 10.1116/1.3182742
29. D. Winston, J. Vac. Sci. Technol. B 27, 2702 (2009). 10.1116/1.3250204
30. P. F. A. Alkemade and E. van Veldhoven, Deposition, Milling, and Etching with a Focused Helium Ion Beam, edited by, M. Stepanova, and, S. Dew, (Springer Wien, New York, 2012), pp. 275-300.
31. J. Melngailis, J. Vac. Sci. Technol. B 5, 469 (1987). 10.1116/1.583937
32. Y. Fu, Ion Beam in Nanoscience and Technology, edited by, R. Hellborg, (Springer, Berlin, 2009), pp. 293-296.
33. K. N. Hooghan, Introduction to Focused Ion Beams Instrumentation, Theory, Techniques and Practice, edited by, L. A. Giannuzzi, and, F. A. Stevie, (Springer, New York, 2005), pp. 87-106.
34. Y. Drezner, D. Fishman, Y. Greenzweig, and A. Raveh, J. Vac. Sci. Technol. B 29, 011026 (2011). 10.1116/1.3539204
35. J. Puretz and L. W. Swanson, J. Vac. Sci. Technol. B 10, 2695 (1992). 10.1116/1.586028
36. J. Melngailis, Proc. SPIE 1465, 36 (1991). 10.1117/12.47341
37. I. Utke, P. Hoffmann, and J. Melngailis, J. Vac. Sci. Technol. B 26, 1197 (2008). 10.1116/1.2955728
38. T. J. Gannon, G. Gu, J. D. Casey, C. Huynh, N. Bassom, and N. Antoniou, J. Vac. Sci. Technol. B 22, 3000 (2004). 10.1116/1.1826065
39. D. W. Niles, W. Dauksher, and R. W. Kee, J. Mater. Eng. Perform. 19, 900 (2010). 10.1007/s11665-009-9560-1
40. P. Chen, E. van Veldhoven, C. A. Sanford, H. W. M. Salemink, D. J. Maas, D. A. Smith, P. D. Rack, and P. F. A. Alkemade, Nanotechnology 21, 455302 (2010). 10.1088/0957-4484/21/45/455302
41. C. A. Sanford, L. Stern, L. Barriss, L. Farkas, M. DiManna, R. Mello, D. J. Maas, and P. F. A. Alkemade, J. Vac. Sci. Technol. B 27, 2660 (2009). 10.1116/1.3237095
42. P. F. A. Alkemade, H. Miro, E. van Veldhoven, D. J. Maas, D. A. Smith, and P. D. Rack, J. Vac. Sci. Technol. B 29, 06FG05 (2011). 10.1116/1.3656347
43. N. I. Kato, Y. Kohno, and H. Saka, J. Vac. Sci. Technol. A 17, 1201 (1999). 10.1116/1.581795
44. L. A. Giannuzzi, R. Geurts, and J. Ringnalda, Microsc. Microanal. 11, 828 (2005).
45. M. Weber, M. Rudolph, J. Kretz, and H.W. P. Koops, J. Vac. Sci. Technol. B 13, 461 (1995). 10.1116/1.588333
46. A. Botman, J. J. L. Mulders, and C. W. Hagen, Nanotechnology 20, 372001 (2009). 10.1088/0957-4484/20/37/372001
47. S. Tan, R. Livengood, D. Shima, J. Notte, and S. McVey, J. Vac. Sci. Technol. B 28, C6F15 (2010). 10.1116/1.3256200
48. H. Langfischer, B. Basner, H. Hutter, and E. Bertagnolli, J. Vac. Sci. Technol. A 20, 1408 (2002). 10.1116/1.1486230
49. A. Lugstein, B. Basner, J. Smoliner, and E. Bertagnolli, Appl. Phys. A 76, 545 (2003). 10.1007/s00339-002-1890-x
50. B. D. Huey and R. M. Langford, Nanotechnology 14, 409 (2003). 10.1088/0957-4484/14/3/310
51. L. Frey, C. Lehrer, and H. Ryssel, Appl. Phys. A 76, 1017 (2003). 10.1007/s00339-002-1943-1
52. M. Ishida, J. Fujita, T. Ichihashi, Y. Ochiai, T. Kaito, and S. Matsui, J. Vac. Sci. Technol. B 21, 2728 (2003). 10.1116/1.1627806
53. D. Tham, C. Y. Nam, and J. E. Fischer, Adv. Mater. 18, 290 (2006). 10.1002/adma.200501832
54. J. F. Ziegler and J. P. Biersach, SRIM-The Stopping Range of Ions in Matter, Version 9 (IBM Research, Yorktown Heights, NY, 1998).
55. T. Tao, J. S. Ro, J. Melngailis, Z. Xue, and D. Kaesz, J. Vac. Sci. Technol. B 8, 1826 (1990). 10.1116/1.585167
56. J. M. De Teresa, R. Córdoba, A. Fernández-Pacheco, O. Montero, P. Strichovanec, and M. R. Ibarra, J. Nanomater. 2009, 936863 (2009). 10.1155/2009/936863