Optical gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates

IEEE Photonics Journal

Volumn 5, Issue 2, 2013, Pages

  Zhang, Jing ^a   Tansu, Nelson ^a  

^a Lehigh University   (United States)

Author keywords

III Nitride; InGaN quantum wells (QWs); laser diodes; optical gain; ternary InGaN substrate; threshold current

Indexed keywords

CONVENTIONAL METHODS; III-NITRIDE; INGAN QUANTUM WELLS; LASER CHARACTERISTICS; TERNARY SUBSTRATES; THRESHOLD CARRIER; THRESHOLD CHARACTERISTICS; THRESHOLD CURRENTS;

OPTICAL GAIN; SEMICONDUCTOR LASERS;

SUBSTRATES;

EID: 84874865920     PISSN: 19430655     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOT.2013.2247587     Document Type: Article

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