Erratum: Auger recombination rates in nitrides from first principles (Applied Physics Letters (2009) 94 (191109) DOI: 10.1063/1.3133359);Auger recombination rates in nitrides from first principles

Applied Physics Letters

Volumn 94, Issue 19, 2009, Pages

  Delaney, Kris T ^a   Rinke, Patrick ^b   Van De Walle, Chris G ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DENSITY FUNCTIONAL THEORY; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; III-V SEMICONDUCTORS; INDIUM ALLOYS; PERTURBATION TECHNIQUES; SEMICONDUCTOR ALLOYS; ZINC SULFIDE;

AUGER RECOMBINATION; DENSITY FUNCTIONALS; DIFFERENT MECHANISMS; EMISSION SPECTRUMS; FREE CARRIER CONCENTRATION; HIGH CURRENT DENSITIES; MANY BODY PERTURBATION THEORY; NON-RADIATIVE LOSS;

AUGERS;

EID: 67049171363     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4954177     Document Type: Erratum

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