MOVPE growth of thick homogeneous InGaN directly on sapphire substrate using A1N buffer layer

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 145-147

  Shimizu, Masaya ^a   Kawaguchi, Yasutoshi ^a   Hiramatsu, Kazumasa ^a   Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACES; THICK FILMS;

BUFFER LAYER; GALLIUM NITRIDE (GAN) EPITAXIAL LAYERS; GROWTH RATE; LATTICE MISMATCH;

SEMICONDUCTING FILMS;

EID: 0031075457     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00155-4     Document Type: Article

References (10)

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