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Journal of Applied Physics

Volumn 110, Issue 11, 2011, Pages

Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

(2) Zhang, Jing a Tansu, Nelson a

a Lehigh University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; COMPRESSIVE STRAIN; CONVENTIONAL APPROACH; EMISSION CHARACTERISTICS; EMISSION WAVELENGTH; ENHANCED SPONTANEOUS EMISSION; GAN TEMPLATE; INGAN QUANTUM WELLS; RADIATIVE RECOMBINATION RATE; SCREENING EFFECT; SPONTANEOUS EMISSION RATES; TERNARY SUBSTRATES;

DIAGNOSIS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; RARE EARTH COMPOUNDS; SUBSTRATES;

GALLIUM ALLOYS;

EID: 84857298604 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3668117 Document Type: Article

Times cited : (163)

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