Importance of non linear piezoelectric effect inWurtzite III-N semiconductors

Optical and Quantum Electronics

Volumn 44, Issue 3-5, 2012, Pages 195-203

  Pal, Joydeep ^a   Tse, Geoffrey ^a   Haxha, Vesel ^a   Migliorato, Max A ^a   Tomić, Stanko ^b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

III nitrides; Piezoelectricity; Semiconductors; Wurtzite structures

Indexed keywords

EXCITONIC PROPERTIES; III-NITRIDES; LINEAR PIEZOELECTRICITY; PIEZO-ELECTRIC FIELDS; PIEZOELECTRIC COEFFICIENT; PIEZOELECTRIC POLARIZATIONS; SECOND ORDERS; SEMI-EMPIRICAL APPROACH; WURTZITE SEMICONDUCTORS; WURTZITE STRUCTURE;

BINARY ALLOYS; CRYSTALLOGRAPHY; NITRIDES; OPTOELECTRONIC DEVICES; PIEZOELECTRIC DEVICES; PIEZOELECTRICITY; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS; ZINC SULFIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84861853823     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-011-9518-z     Document Type: Conference Paper

References (49)

1. Adelmann, C., Sarigiannidou, E., Jalabert, D., Hori, Y., Rouvière, J.-L., Daudinc, B., Fanget, S., Bru-Chevallier, C., Shibata, T., Tanaka, M.: Growth and optical properties of GaN/AlN quantum wells. Appl. Phys. Lett. 82, 4154-4156 (2003).
2. Ambacher, O., Majewski, J., Miskys, C., Link, A., Hermann, M., Eickhoff, M., Stutzmann, M., Bernardini, F., Fiorentini, V., Tilak, V., Schaff, B., Eastman, L.F.: Pyroelectric properties of Al(In)GaN/GaN heteroand quantum well structures. J. Phys. Condens. Matter 14, 3399-3434 (2002).
3. Andreev, A.D., O'Reilly, E.P.: Theory of the electronic structure of GaN/AlN hexagonal quantum dots. Phys. Rev. B 62, 15851-15870 (2000).
4. Asgari, A., Razi, S.: High performances III-nitride quantum dot infrared photodetector operating at room temperature. Opt. Express 18, 14604-14615 (2010).
5. Bernardini, F., Fiorentini, V.: First-principles calculation of the piezoelectric tensor of III-V nitrides. Appl. Phys. Lett. 80, 4145-4147 (2002).
6. Bernardini, F., Fiorentini, V., Vanderbilt, D.: Spontaneous polarization and piezoelectric constants of III-V nitrides. Phys. Rev. B 56, R10024-R10027 (1997).
7. Berry, M.V.: Quantal phase factors accompanying adiabatic changes. Proc. R. Soc. Lond. A 392, 45-57 (1984).
8. Bester, G., Wu, X., Vanderbilt, D., Zunger, A.: Importance of second-order piezoelectric effects in Zinc-Blende semiconductors. Phys. Rev. Lett. 96, 1876021-1876024 (2006).
9. Braga, N., Gaska, R., Mickevicius, R., Shur, M.S., Hu, X., Khan, M.A., Simin, G., Yang, J.: Simulation of gate lag and current collapse in gallium nitride field-effect transistors. Appl. Phys. Lett. 85, 4780-4782 (2004a).
10. Braga, N., Gaska, R., Mickevicius, R., Shur, M.S., Hu, X., Khan, M.A., Simin, G., Yang, J.: Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors. J. Appl. Phys. 95, 6409-6413 (2004b).
11. Buchheim, C., Goldhahn, R., Winzer, A.T., Gobsch, G., Rossow, U., Fuhrmann, D., Hangleiter, A., Furtmayr, F., Eickhoff, M.: Stark shift of interband transitions in AlN/GaN superlattices. Appl. Phys. Lett. 90, 2419061-2419063 (2007).
12. Cady, W.G.: Piezoelectricity. McGraw-Hill, New York (1946).
13. Cai, D., Guo, G.-Y.: Tuning linear and nonlinear optical properties of wurtzite GaN by c-axial stress. J. Phys. D Appl. Phys. 42, 1851071-1851078 (2009).
14. Chuang, S.L., Chang, C.S.: k-p method for strained wurtzite semiconductors. Phys. Rev. B 54, 2491- 2504 (1996).
15. Clark, S.J., Segall, M.D., Pickard, C.J., Hasnip, P.J., Probert, M.J., Refson, K., Payne, M.C.: First principles methods using CASTEP. Zeitschrift für Kristallographie 220(5-6), 567-570 (2005).
16. Cui, X.Y., Carter, D.J., Fuchs, M., Delley, B., Wei, S.H., Freeman, A.J., Stampfl, C.: Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field. Phys. Rev. B 81, 155301-1-155301- 5 (2010).
17. Garg, R., Hüe, A., Haxha, V., Migliorato, M.A., Hammerschmidt, T., Srivastava, G.P.: Tunability of the piezoelectric fields in strained III-V semiconductors. Appl. Phys. Lett. 95, 041912-1-041912-3 (2009).
18. Hamann, D.R.: Generalized norm-conserving pseudopotentials. Phys. Rev. B 40, 2980-2987 (1989).
19. Hangleiter, A., Hitzel, F., Lahmann, S., Rossow, U.: Composition dependence of polarization fields in GaInN/GaN quantum wells. Appl. Phys. Lett. 83, 1169-1171 (2003).
20. Harrison, W.A.: Electronic Structure and Properties of Solids. Dover Publications Inc., New York (1989).
21. Helman, A., Tchernycheva, M., Lusson, A., Warde, E., Julien, F.H., Moumanis, K., Fishman, G., Monroy, E., Daudin, B., Dang, D.L.S., Bellet-Amalric, E., Jalabert, D.: Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy. Appl. Phys. Lett. 83, 5196- 5198 (2003).
22. Hu, W.D., Chen, X.S., Quan, Z.J., Xia, C.S., Lu, W., Ye, P.D.: Self-heating simulation of GaN-based metaloxide- semiconductor high-electron-mobility transistors including hot electron and quantum effects. J. Appl. Phys 100, 0745011-0745019 (2006).
23. Hu, W.D., Chen, X.S., Yin, F., Zhang, J.B., Lu, W.: Two-dimensional transient simulations of drain lag and current collapse in GaN-based high-electron-mobility transistors. J. Appl. Phys. 105, 0845021-0845027 (2009).
24. Ji, L.-W., Su, Y.K., Chang, S.J., Chang, C.S., Wu, L.W., Lai, W.C., Du, X.L., Chen, H.: InGaN/GaN multiquantum dot light-emitting diodes. J. Cryst. Growth 263, 114-118 (2004).
25. Leroux, M., Grandjean, N., Massies, J., Gil, B., Lefebvre, P., Bigenwald, P.: Barrier-width dependence of group-III nitrides quantum-well transition energies. Phys. Rev. B 60, 1496-1499 (1999).
26. Lew, L.C., Voon, Y., Willatzen, M.: Electromechanical phenomena in semiconductor nanostructures. J. Appl. Phys. 109, 0311011-03110124 (2011).
27. Liu, G., Zhao, H., Zhang, J., Park, J.H., Mawst, L.J., Tansu, N.: Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography. Nanoscale Res. Lett. 6, 13421-134210 (2011).
28. Löwdin, P.-O.: Quantum theory ofmany-particle systems. I. Physical interpretations by means of density matrices, natural spin-orbitals, and convergence problems in the method of configurational interaction. Phys. Rev. 97, 1474-1489 (1955).
29. Martin, R.M.: Piezoelectricity. Phys. Rev. B 5, 1607-1613 (1972).
30. Migliorato, M.A., Powell, D., Cullis, A.G., Hammerschmidt, T., Srivastava, G.P.: Composition and strain dependence of the piezoelectric coefficients in InxGa1-xAs alloys. Phys. Rev. B 74, 2453321-2453327 (2006).
31. Miller, E.J., Yu, E.T.: Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance-voltage carrier profiling. Appl. Phys. Lett. 80, 3551-3553 (2002).
32. Monkhorst, H.J., Pack, J.D.: Special points for Brillonin-zone integrations. Phys. Rev. B 13, 5188-5192 (1976).
33. Nakamura, S., Fasol, G.: The Blue Laser Diode: GaN Based Light Emitters and Lasers. Springer, Berlin (1997).
34. Pal, J., Tse, G., Haxha, V., Migliorato, M.A., Tomíc, S.: Second-order piezoelectricity in wurtzite III-N semiconductors. Phys. Rev. B 84, 0852111-0852117 (2011).
35. Park, S.H., Chuang, S.L.: Spontaneous polarization effects in wurtzite GaN/AlGaN quantum wells and comparison with experiment. Appl. Phys. Lett. 76, 1981-1983 (2000).
36. Park, I.-K., Kwon, M.-K., Seo, S.-B., Kim, J.-Y., Lim, J.-H., Park, S.-J.: Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots. Appl. Phys. Lett. 90, 1111161-1111163 (2007).
37. Perdew, J.P., Zunger, A.: Self-interaction correction to density-functional approximations for many-electron systems. Phys. Rev. B 23, 5048-5079 (1981).
38. Shimada, K., Sota, T., Suzuki, K., Okumura, H.: First-principles study on piezoelectric constants in strained BN, AlN, and GaN. Jpn. J. Appl. Phys. 37, L1421-L1423 (1998).
39. Shieh, C.C., Cui, X.Y., Delly, B., Stampfl, C.: Built-in electric fields and valence band offsets in InN/GaN(0001) superlattices: First-principles investigations. J. Appl. Phys. 109, 0837211-0837218 (2011).
40. Soh, C.B., Liu, W., Chua, S.J., Ang, S.S., Tan, R.J.N., Chow, S.Y.: Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer. J. Appl. Phys. 108, 0935011-0935015 (2010).
41. Tachibana, K., Someya, T., Arakawa, Y.: Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition. Appl. Phys. Lett. 74, 383-385 (1999).
42. Tchernycheva, M., Nevou, L., Doyennette, L., Julien, F.H., Warde, E., Guillot, F., Monroy, E., Bellet-Amalric, E., Remmele, T., Albrecht, M.: Systematic experimental and theoretical investigation of intersubband absorption in GaN/AlN quantum wells. Phys. Rev. B 73, 1253471-12534711 (2006).
43. Tomíc, S., Harrison, N.M., Jones, T.S.: Electronic structure of QD arrays: application to intermediate-band solar cells. Opt. Quant. Electron 40, 313-318 (2008).
44. Tomíc, S., Vukmirovíc, N.: Excitonic and biexcitonic properties of single GaN quantum dots modeled by 8-band k·p theory and configuration-interaction method. Phys. Rev. B 79, 2453301-24533010 (2009).
45. Troullier, N., Martins, J.L.: Efficient pseudopotentials for plane-wave calculations. Phys. Rev. B 43, 1993- 2006 (1991).
46. Vaschenko, G., Menoni, C.S., Patel, D., Tomé, C.N., Clausen, B., Gardner, N.F., Sun, J., Götz, W., Ng, H.M., Cho, A.Y.: Nonlinear polarization in nitrides revealed with hydrostatic pressure. Phys. Stat. Sol. B 235, 238-247 (2003).
47. Vaschenko, G., Patel, D., Menoni, C.S., Gardner, N.F., Sun, J., Götz, W., Tomé, C.N., Clausen, B.: Significant strain dependence of piezoelectric constants in InxGa1ÀxNÕGaN quantum wells. Phys. Rev. B 64, 2413081-2413084 (2001).
48. Xu, T., Nikiforov, A.Y., France, R., Thomidis, C., Williams, A., Moustakas, T.D.: Blue-green-red LEDs based on InGaN quantum dots grown by plasma-assisted molecular beam epitaxy. Phys. Stat. Sol. A 204(6), 2098-2102 (2007).
49. Yu, E.T., Dang, X.Z., Asbeck, P.M., Lau, S.S., Sullivan, G.J.: Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures. J. Vac. Sci. Technol. B 17, 1742-1749 (1999).