Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

Applied Physics Letters

Volumn 97, Issue 26, 2010, Pages

  Wang, C H ^a   Ke, C C ^a   Lee, C Y ^a   Chang, S P ^a,b   Chang, W T ^a   Li, J C ^a   Li, Z Y ^a   Yang, H C ^b   Kuo, H C ^a   Lu, T C ^a   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOSITION; ELECTRON BLOCKING LAYER; ELECTRON CONFINEMENT; FORWARD VOLTAGE; HIGH CURRENT DENSITIES; HOLE INJECTION; INGAN/GAN; INJECTION CURRENTS; MAXIMUM VALUES; METALORGANIC CHEMICAL VAPOR DEPOSITION; OUTPUT POWER; SERIES RESISTANCES; SIMULATION RESULT;

LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; PLASMA CONFINEMENT;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 78650917139     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3531753     Document Type: Article

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