Electronic and optical properties of staggered InGaN/InGaN quantum-well light-emitting diodes

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 11, 2009, Pages 2637-2640

  Park, Seoung Hwan ^a   Ahn, Doyeol ^b   Koo, Bun Hei ^c   Kim, Jong Wook ^c  

^a Catholic University of Daegu   (South Korea)

^b University of Seoul   (South Korea)

^c WOOREE LST Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE-MASS THEORY; MULTIBAND; QUANTUM WELL; WELL WIDTH;

LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION;

OPTICAL PROPERTIES;

EID: 72149091291     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925020     Document Type: Article

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